J. Polleux, F. Moutier, A. Billabert, C. Rumelhard, E. Sonmez, H. Schumacher
{"title":"一种用于近程光微波应用的应变SiGe层异质结双极光电晶体管","authors":"J. Polleux, F. Moutier, A. Billabert, C. Rumelhard, E. Sonmez, H. Schumacher","doi":"10.1109/MWP.2003.1422840","DOIUrl":null,"url":null,"abstract":"A strained-SiGe heterojunction bipolar phototransistor is presented for the first time. Theoretical demonstration of the device is recalled. Practical measurements at 940 nm are presented. A dc phototransistor mode responsivity of 1.49 A/W is achieved. Tools are proposed for the opto-microwave behavior analyses of photodetectors. A frequency behavior reaching 32 GHz with a -70 dBm output level and a 200 /spl mu/W input optical power is demonstrated.","PeriodicalId":432014,"journal":{"name":"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications\",\"authors\":\"J. Polleux, F. Moutier, A. Billabert, C. Rumelhard, E. Sonmez, H. Schumacher\",\"doi\":\"10.1109/MWP.2003.1422840\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A strained-SiGe heterojunction bipolar phototransistor is presented for the first time. Theoretical demonstration of the device is recalled. Practical measurements at 940 nm are presented. A dc phototransistor mode responsivity of 1.49 A/W is achieved. Tools are proposed for the opto-microwave behavior analyses of photodetectors. A frequency behavior reaching 32 GHz with a -70 dBm output level and a 200 /spl mu/W input optical power is demonstrated.\",\"PeriodicalId\":432014,\"journal\":{\"name\":\"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWP.2003.1422840\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWP.2003.1422840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications
A strained-SiGe heterojunction bipolar phototransistor is presented for the first time. Theoretical demonstration of the device is recalled. Practical measurements at 940 nm are presented. A dc phototransistor mode responsivity of 1.49 A/W is achieved. Tools are proposed for the opto-microwave behavior analyses of photodetectors. A frequency behavior reaching 32 GHz with a -70 dBm output level and a 200 /spl mu/W input optical power is demonstrated.
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