无铅焊料与Ni UBM表面处理剂的电迁移性能比较

M. Lu, P. Lauro, D. Shih, R. Polastre, C. Goldsmith, D. W. Henderson, Hongqing Zhang, M. Cho
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引用次数: 27

摘要

采用一系列的电迁移(EM)实验来评估由Sn-Ag和Sn-Cu合金组成的焊点在三种可焊表面处理(Cu、Ni-Au和Ni-Cu)下的失效时间性能。在所有的实验中,焊点中的相对焊盘结构都是相同的,由层状结构组成,模拟了用于控制崩溃芯片连接(C4)的镍基凹凸下冶金(UBM)。正如预期的那样,锡的晶粒尺寸很大,而典型的焊点只有少数晶粒。在这里报告的所有实验中,电子电流在评估表面光洁度的情况下离开焊盘并进入焊料。确定了两种失效模式。其破坏模式与焊点中较大Sn晶粒的c轴方向相对于外加电流方向有关。当c轴与电流方向不紧密对准时,焊料- imc界面处的空化会导致电故障。当c轴与电流方向紧密对齐时,发生更快的失效模式。通过这种排列,界面内嵌层结构被快速扩散过程从衬垫表面扫走,衬垫材料被迅速消耗。界面空洞的形成导致这种模式下的快速破坏。Sn-Ag钎料表现出更大的微观结构稳定性。但是,很明显,在Sn-Ag合金中添加大量Cu后,EM性能最好。该合金改性与Ni衬垫结构相结合,显示出最佳的EM寿命。
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Comparison of electromigration performance for Pb-free solders and surface finishes with Ni UBM
A series of electromigration (EM) experiments were undertaken to evaluate the time to failure performance of solder joints comprised of Sn-Ag and Sn-Cu alloys in combination with three solderable surface finishes, Cu, Ni-Au and Ni-Cu. The opposing pad structure in the solder joints was the same in all experiments and was comprised of a layered structure, simulating Ni based under - bump - metallurgies (UBM) for controlled collapse chip connection (C4). As anticipated the Sn grain size was large with the typical solder joint containing only a few grains. In all experiments, reported here, the electron current exited the pad with the surface finish under evaluation and passed into the solder. Two failure modes were identified. The manifested failure mode depended on the orientation of the c-axis of the larger Sn grains in the solder joint with respect to the applied current direction. When the c-axis is not closely aligned with the current direction, cavitation at solder-IMC interface leads to electrical failure. A more rapid failure mode occurred when the c-axis was closely aligned with the current direction. With this alignment the interfacial IMC structures were swept away by rapid diffusive processes from the pad surface and the pad material was quickly consumed. Interfacial void formation leads to rapid failure in this mode. The Sn-Ag solder appeared to demonstrate greater microstructural stability. But, clearly the best EM performance was seen with the addition of significant levels of Cu to the Sn-Ag alloy. This alloy modification showed the best EM lifetime in combination with a Ni pad structure.
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