SIO2/HFO2介电堆应力诱发漏电流来源的新认识

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI:10.1109/IRWS.2006.305223

M. Rafik, G. Ribes, D. Roy, S. Kalpat, G. Ghibaudo

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引用次数: 2

摘要

本文研究了正栅极电压下的应力感应漏电流。事实证明，这是由大量缺陷引起的，这些缺陷也导致了故障。此外，根据栅极电压的不同，可能会产生错误的估计，从而影响对可靠性的结论

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New Insight on the Origin of Stress Induced Leakage Current for SIO2/HFO2 Dielectric Stacks

In this paper, stress induced leakage current under positive gate voltage is investigated. It turns out that it is caused by bulk defects that are also responsible for breakdown. Moreover, it appears that depending on the gate voltage, erroneous estimation could be made and could affect the conclusions on the reliability

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2006 IEEE International Integrated Reliability Workshop Final Report

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