使用高k介电浆料增材制造的金属-绝缘体-金属电容器

Omer F. Firat, Jing Wang, T. Weller
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引用次数: 0

摘要

本文提出了一种金属-绝缘子-金属(MIM)电容器的制造新方法。采用微点胶技术在卡普顿磁带上实现增材制造(AM)无源器件。这些3D打印电容器采用杜邦CB028作为导电层,Creative Materials 128-49作为介电层。实现了一个0.55 mm2的电容,其自谐振值为7.12 pF,自谐振频率为6 GHz, Q因子为103。该电容器可嵌入到大面积射频和微波系统中。
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Additively Manufactured Metal-Insulator-Metal Capacitors using a High-K Dielectric Paste
This paper presents a new fabrication method for metal-insulator-metal (MIM) capacitors. Micro-dispensing is used to realize the additively manufactured (AM) passive devices on a Kapton tape. These 3D printed capacitors are fabricated using Dupont CB028 to form the conductive layers and Creative Materials 128-49 as the dielectric layer. A 0.55 mm2 capacitor is realized and shows a value of 7.12 pF with the self-resonance of 6 GHz and Q factor of 103. This capacitor could be embedded into large area RF and microwave systems.
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