{"title":"一个150 GHz sub-0.1 μ m E/D MODFET MSI工艺","authors":"H. Rohdin, A. Nagy","doi":"10.1109/IEDM.1992.307371","DOIUrl":null,"url":null,"abstract":"We report a method for fabricating sub-0.1- mu m gates using conventional optical contact lithography, exploiting self-limiting notch formation in conformal PECVD oxide between ohmic contacts, and the limited lateral etch of oxide by RIE. The resulting gate openings in the oxide are very narrow ( approximately=700 AA), and quite uniform ( sigma <0.2x). 154 GHz current gain cutoff frequency has been extrapolated for a pseudomorphic InGaAs-channel E-MODFET made in this way. Functioning prescalers have been fabricated and characterized on-wafer.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 150 GHz sub-0.1- mu m E/D MODFET MSI process\",\"authors\":\"H. Rohdin, A. Nagy\",\"doi\":\"10.1109/IEDM.1992.307371\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a method for fabricating sub-0.1- mu m gates using conventional optical contact lithography, exploiting self-limiting notch formation in conformal PECVD oxide between ohmic contacts, and the limited lateral etch of oxide by RIE. The resulting gate openings in the oxide are very narrow ( approximately=700 AA), and quite uniform ( sigma <0.2x). 154 GHz current gain cutoff frequency has been extrapolated for a pseudomorphic InGaAs-channel E-MODFET made in this way. Functioning prescalers have been fabricated and characterized on-wafer.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"109 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307371\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307371","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report a method for fabricating sub-0.1- mu m gates using conventional optical contact lithography, exploiting self-limiting notch formation in conformal PECVD oxide between ohmic contacts, and the limited lateral etch of oxide by RIE. The resulting gate openings in the oxide are very narrow ( approximately=700 AA), and quite uniform ( sigma <0.2x). 154 GHz current gain cutoff frequency has been extrapolated for a pseudomorphic InGaAs-channel E-MODFET made in this way. Functioning prescalers have been fabricated and characterized on-wafer.<>
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