MEMS传感器模块ESD系统级仿真

G. Langguth, F. Nieden, C. Kupfer, O. Rösch, Benno Mühlbacher, E. Bach
{"title":"MEMS传感器模块ESD系统级仿真","authors":"G. Langguth, F. Nieden, C. Kupfer, O. Rösch, Benno Mühlbacher, E. Bach","doi":"10.23919/EOS/ESD.2018.8509773","DOIUrl":null,"url":null,"abstract":"A system level simulation approach is presented for MEMS sensor modules. Module protection and tester parasitics are modelled as ideal RLC network. On-chip ESD protection simulation is based on compact models. Simulation results can quantitatively explain qualification fails and validate the approach, enabling a subsequent optimization of the overall ESD protection.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"ESD System Level Simulation of MEMS Sensor Modules\",\"authors\":\"G. Langguth, F. Nieden, C. Kupfer, O. Rösch, Benno Mühlbacher, E. Bach\",\"doi\":\"10.23919/EOS/ESD.2018.8509773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A system level simulation approach is presented for MEMS sensor modules. Module protection and tester parasitics are modelled as ideal RLC network. On-chip ESD protection simulation is based on compact models. Simulation results can quantitatively explain qualification fails and validate the approach, enabling a subsequent optimization of the overall ESD protection.\",\"PeriodicalId\":328499,\"journal\":{\"name\":\"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EOS/ESD.2018.8509773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EOS/ESD.2018.8509773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种微机电系统传感器模块的系统级仿真方法。将模块保护和测试仪寄生建模为理想的RLC网络。片上ESD保护仿真基于紧凑的模型。仿真结果可以定量地解释鉴定失败并验证方法,从而实现对整体ESD保护的后续优化。
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ESD System Level Simulation of MEMS Sensor Modules
A system level simulation approach is presented for MEMS sensor modules. Module protection and tester parasitics are modelled as ideal RLC network. On-chip ESD protection simulation is based on compact models. Simulation results can quantitatively explain qualification fails and validate the approach, enabling a subsequent optimization of the overall ESD protection.
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