{"title":"65纳米CMOS技术中漏电流补偿的完全集成锁相环","authors":"Se-Chun Park, Seung-Baek Park, Soo-Won Kim","doi":"10.1109/ICCE.2015.7066538","DOIUrl":null,"url":null,"abstract":"In this study, a fully integrated Phase-locked loop (PLL) that is applicable to Universal Flash Storage (UFS) systems is presented. The fully integrated PLL is realized using a MOS capacitor as an on-chip loop filter (LF). To compensate for leakage current in the LF, a leakage current compensation scheme is presented. With the leakage compensation scheme, the peak-to-peak jitter and rms jitter are 40ps and 7.62ps, respectively. The area of the LF was reduced by around a sixteenth part compared with a metal insulator metal (MIM) capacitor.","PeriodicalId":169402,"journal":{"name":"2015 IEEE International Conference on Consumer Electronics (ICCE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A fully integrated Phase-locked loop with leakage current compensation in 65-nm CMOS technology\",\"authors\":\"Se-Chun Park, Seung-Baek Park, Soo-Won Kim\",\"doi\":\"10.1109/ICCE.2015.7066538\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, a fully integrated Phase-locked loop (PLL) that is applicable to Universal Flash Storage (UFS) systems is presented. The fully integrated PLL is realized using a MOS capacitor as an on-chip loop filter (LF). To compensate for leakage current in the LF, a leakage current compensation scheme is presented. With the leakage compensation scheme, the peak-to-peak jitter and rms jitter are 40ps and 7.62ps, respectively. The area of the LF was reduced by around a sixteenth part compared with a metal insulator metal (MIM) capacitor.\",\"PeriodicalId\":169402,\"journal\":{\"name\":\"2015 IEEE International Conference on Consumer Electronics (ICCE)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Conference on Consumer Electronics (ICCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCE.2015.7066538\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Consumer Electronics (ICCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCE.2015.7066538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully integrated Phase-locked loop with leakage current compensation in 65-nm CMOS technology
In this study, a fully integrated Phase-locked loop (PLL) that is applicable to Universal Flash Storage (UFS) systems is presented. The fully integrated PLL is realized using a MOS capacitor as an on-chip loop filter (LF). To compensate for leakage current in the LF, a leakage current compensation scheme is presented. With the leakage compensation scheme, the peak-to-peak jitter and rms jitter are 40ps and 7.62ps, respectively. The area of the LF was reduced by around a sixteenth part compared with a metal insulator metal (MIM) capacitor.