{"title":"长半导体光放大器中的交叉偏振调制效应","authors":"Y. Said, H. Rezig, A. Bouallègue","doi":"10.1109/ICTONMW.2007.4446944","DOIUrl":null,"url":null,"abstract":"The aim of the present work is to present an analysis of the impact of Semiconductor Optical Amplifier length variation on the cross-polarization modulation (XPolM) effect in the structure. This nonlinear behavior, which is exploited to assure high speed devices and various applications for the high bit rate optical networks, is investigated referring to numerical simulations based on Stokes parameters measurement. Consequently, it is shown that the azimuth and the ellipticity parameters at the output undergo changes by varying the input polarization, bias current and obviously the SOA length which plays an important role in the gain dynamics of the structure.","PeriodicalId":366170,"journal":{"name":"2007 ICTON Mediterranean Winter Conference","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Cross-polarization modulation effects in long semiconductor optical amplifiers\",\"authors\":\"Y. Said, H. Rezig, A. Bouallègue\",\"doi\":\"10.1109/ICTONMW.2007.4446944\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of the present work is to present an analysis of the impact of Semiconductor Optical Amplifier length variation on the cross-polarization modulation (XPolM) effect in the structure. This nonlinear behavior, which is exploited to assure high speed devices and various applications for the high bit rate optical networks, is investigated referring to numerical simulations based on Stokes parameters measurement. Consequently, it is shown that the azimuth and the ellipticity parameters at the output undergo changes by varying the input polarization, bias current and obviously the SOA length which plays an important role in the gain dynamics of the structure.\",\"PeriodicalId\":366170,\"journal\":{\"name\":\"2007 ICTON Mediterranean Winter Conference\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 ICTON Mediterranean Winter Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTONMW.2007.4446944\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 ICTON Mediterranean Winter Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTONMW.2007.4446944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cross-polarization modulation effects in long semiconductor optical amplifiers
The aim of the present work is to present an analysis of the impact of Semiconductor Optical Amplifier length variation on the cross-polarization modulation (XPolM) effect in the structure. This nonlinear behavior, which is exploited to assure high speed devices and various applications for the high bit rate optical networks, is investigated referring to numerical simulations based on Stokes parameters measurement. Consequently, it is shown that the azimuth and the ellipticity parameters at the output undergo changes by varying the input polarization, bias current and obviously the SOA length which plays an important role in the gain dynamics of the structure.
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