束辅助工艺制备纳米分裂发射极的电子发射模式观察

K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai
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引用次数: 5

摘要

研究了用光束辅助工艺制备的纳米劈裂发射极中电子干扰的可能性。当间隙尺寸为16 nm时,在接近导通电压的栅极电压下观察到两个光斑的发射模式。在较高的栅极电压下,两个光斑重叠,但在室温下没有观察到干涉条纹。
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Observation of electron emission pattern from nano-split emitter fabricated using beam assisted process
The possibility of interference of electrons from a nano-split emitter fabricated using beam assisted processes has been investigated. With the gap size of 16 nm, the emission pattern with two spots was observed at a gate voltage close to the turn-on voltage. At the higher gate voltages, two spots become overlapped but no interference fringes were observed at room temperature.
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