K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai
{"title":"束辅助工艺制备纳米分裂发射极的电子发射模式观察","authors":"K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai","doi":"10.1116/1.1875372","DOIUrl":null,"url":null,"abstract":"The possibility of interference of electrons from a nano-split emitter fabricated using beam assisted processes has been investigated. With the gap size of 16 nm, the emission pattern with two spots was observed at a gate voltage close to the turn-on voltage. At the higher gate voltages, two spots become overlapped but no interference fringes were observed at room temperature.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Observation of electron emission pattern from nano-split emitter fabricated using beam assisted process\",\"authors\":\"K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai\",\"doi\":\"10.1116/1.1875372\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The possibility of interference of electrons from a nano-split emitter fabricated using beam assisted processes has been investigated. With the gap size of 16 nm, the emission pattern with two spots was observed at a gate voltage close to the turn-on voltage. At the higher gate voltages, two spots become overlapped but no interference fringes were observed at room temperature.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/1.1875372\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/1.1875372","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Observation of electron emission pattern from nano-split emitter fabricated using beam assisted process
The possibility of interference of electrons from a nano-split emitter fabricated using beam assisted processes has been investigated. With the gap size of 16 nm, the emission pattern with two spots was observed at a gate voltage close to the turn-on voltage. At the higher gate voltages, two spots become overlapped but no interference fringes were observed at room temperature.