S. Pidin, M. Mushiga, H. Shido, T. Yamamoto, Y. Sambonsugi, Y. Tamura, T. Sugii
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A notched metal gate MOSFET for sub-0.1 /spl mu/m operation
We demonstrate a notched W/TiN gate MOSFET for which both threshold voltage adjustment and suppression of the short channel effect are achieved simultaneously. To lower the threshold voltage, low channel doping concentration and high dose-low energy counter-doping are combined with high-dose tilted pocket implant performed using notched gate. Due to presence of notches, near optimal pocket implant distribution in the channel is achieved.
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