{"title":"优化的X和Ku波段GaAs MMIC变容管调谐FET振荡器","authors":"E. Reese, J. Beall","doi":"10.1109/MWSYM.1988.22080","DOIUrl":null,"url":null,"abstract":"The modeling techniques used to understand and predict the phenomena of frequency hops and holes in X-band and Ku band monolithic microwave integrated circuit (MMIC) voltage-controlled oscillators (VCOs) are described. The use of nonlinear circuit analysis has led to circuit improvements, including a novel lateral varactor structure compatible with FET devices and uniform ion-implanted material, realizing better Q. Devices were fabricated and tested, confirming the validity of the modeling and design approaches. Monolithic X-band and Ku-band VCOs realized continuous tuning over 5.9-12.6 GHz and 10.6-20.4 GHz, respectively; continuous tuning was retained over the temperature range -55 to +90 degrees C.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Optimized X and Ku band GaAs MMIC varactor tuned FET oscillators\",\"authors\":\"E. Reese, J. Beall\",\"doi\":\"10.1109/MWSYM.1988.22080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The modeling techniques used to understand and predict the phenomena of frequency hops and holes in X-band and Ku band monolithic microwave integrated circuit (MMIC) voltage-controlled oscillators (VCOs) are described. The use of nonlinear circuit analysis has led to circuit improvements, including a novel lateral varactor structure compatible with FET devices and uniform ion-implanted material, realizing better Q. Devices were fabricated and tested, confirming the validity of the modeling and design approaches. Monolithic X-band and Ku-band VCOs realized continuous tuning over 5.9-12.6 GHz and 10.6-20.4 GHz, respectively; continuous tuning was retained over the temperature range -55 to +90 degrees C.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimized X and Ku band GaAs MMIC varactor tuned FET oscillators
The modeling techniques used to understand and predict the phenomena of frequency hops and holes in X-band and Ku band monolithic microwave integrated circuit (MMIC) voltage-controlled oscillators (VCOs) are described. The use of nonlinear circuit analysis has led to circuit improvements, including a novel lateral varactor structure compatible with FET devices and uniform ion-implanted material, realizing better Q. Devices were fabricated and tested, confirming the validity of the modeling and design approaches. Monolithic X-band and Ku-band VCOs realized continuous tuning over 5.9-12.6 GHz and 10.6-20.4 GHz, respectively; continuous tuning was retained over the temperature range -55 to +90 degrees C.<>
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