移动设备中用于微电子芯片的热点感知微通道冷却附加组件

L. Collin, J. Colonna, P. Coudrain, M. Shirazy, S. Chéramy, A. Souifi, L. Fréchette
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引用次数: 5

摘要

本工作提出了一种实验性微通道解决方案,使用非侵入式技术来冷却带有热点的微电子芯片。在微电子领域,诸如芯片减薄之类的方法会引起对冷却的严重压力,因为它会增加热点现象并减少针对微通道的芯片体积厚度。在移动设备中,必须使用有限的泵送功率和冷却空间来除去热量。在芯片背面蚀刻微通道通常被认为是一种有效的冷却解决方案,但在高度薄的芯片上是不切实际的。本文通过实验研究了与芯片背面直接流体接触的非侵入式热点感知微通道芯片的冷却性能。它还提出了一个限制指标。在每个热源的热流密度为1185 W/cm2时,热阻为2.8°C/W,总耗散功率为20 W,最大允许温升为55°C。在压力降仅为19.2 kPa,流量为9.4 ml/min的情况下,水力功率仅为3 mW,性能系数为6500。因此,背面冷却似乎是一个紧凑和低消耗的解决方案,为移动应用芯片的高度限制的热量。
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Hot spot aware microchannel cooling add-on for microelectronic chips in mobile devices
This work proposes an experimental microchannel solution to cool microelectronic chips with hot spots, using a non-intrusive technique. In microelectronics, approaches such as die thinning induces acute stress on cooling because it increases the hotspot phenomena and reduces chip bulk thickness aimed for microchannels. In mobile devices, the heat must be removed using limited pumping power and cooling space. Microchannels etched in the backside of the chip, usually considered as an efficient cooling solution, are impracticable on highly thinned chips. This work experimentally investigates the cooling performance of a non-invasive and hot spot aware microchannel die that is in direct fluidic contact with the backside of the chip. It also proposes a confinement-wise metric. A thermal resistance of 2.8 °C/W is achieved at heat flux of 1185 W/cm2 per heat source, for a total dissipated power of 20 W and a maximum allowed temperature rise of 55 °C. Such performance is obtained with only 19.2 kPa of pressure drop and 9.4 ml/min of flow rate, making a hydraulic power of only 3 mW, representing a coefficient of performance of 6500. Therefore, backside cooling appears as a compact and low consumption solution for highly confined heat on chips for mobile applications.
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