{"title":"基于仿真的GaAs和InP太阳能电池特性分析","authors":"Sana Moin, S. Faraz","doi":"10.1109/ISNE.2019.8896687","DOIUrl":null,"url":null,"abstract":"This paper presents the simulation of currentvoltage (IV) characteristics and analysis of III-V semiconductors, Gallium Arsenide (GaAs) and Indium Phosphide (InP) homojunction solar cell under standard illumination AirMass-1.5D (AM1.5D) spectrum using MicroTec-simulator. The IV characteristics curves signify the use of GaAs with 86.22% Fill Factor (FF) and 28.5% efficiency than InP with 82.48% FF and 24% efficiency in photovoltaic (PV) unit. The influence of change in doping profile and temperature of GaAs solar cell is simulated for improving the device performance. Due to the substantial increase in base doping concentration, increase in Maximum Power Output (Pm), FF and efficiency have been noticed. We have observed 0.684% per °C decrease in Pm along with 0.1% per °C decrease in efficiency from the GaAs photovoltaic cell.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Simulation based IV Characteristics Analysis of GaAs and InP Solar Cell\",\"authors\":\"Sana Moin, S. Faraz\",\"doi\":\"10.1109/ISNE.2019.8896687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the simulation of currentvoltage (IV) characteristics and analysis of III-V semiconductors, Gallium Arsenide (GaAs) and Indium Phosphide (InP) homojunction solar cell under standard illumination AirMass-1.5D (AM1.5D) spectrum using MicroTec-simulator. The IV characteristics curves signify the use of GaAs with 86.22% Fill Factor (FF) and 28.5% efficiency than InP with 82.48% FF and 24% efficiency in photovoltaic (PV) unit. The influence of change in doping profile and temperature of GaAs solar cell is simulated for improving the device performance. Due to the substantial increase in base doping concentration, increase in Maximum Power Output (Pm), FF and efficiency have been noticed. We have observed 0.684% per °C decrease in Pm along with 0.1% per °C decrease in efficiency from the GaAs photovoltaic cell.\",\"PeriodicalId\":405565,\"journal\":{\"name\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2019.8896687\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 8th International Symposium on Next Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2019.8896687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation based IV Characteristics Analysis of GaAs and InP Solar Cell
This paper presents the simulation of currentvoltage (IV) characteristics and analysis of III-V semiconductors, Gallium Arsenide (GaAs) and Indium Phosphide (InP) homojunction solar cell under standard illumination AirMass-1.5D (AM1.5D) spectrum using MicroTec-simulator. The IV characteristics curves signify the use of GaAs with 86.22% Fill Factor (FF) and 28.5% efficiency than InP with 82.48% FF and 24% efficiency in photovoltaic (PV) unit. The influence of change in doping profile and temperature of GaAs solar cell is simulated for improving the device performance. Due to the substantial increase in base doping concentration, increase in Maximum Power Output (Pm), FF and efficiency have been noticed. We have observed 0.684% per °C decrease in Pm along with 0.1% per °C decrease in efficiency from the GaAs photovoltaic cell.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
