{"title":"p hemt毫米波功率击穿:与phemt的比较","authors":"J. D. del Alamo, M. Somerville","doi":"10.1109/gaas.1998.722608","DOIUrl":null,"url":null,"abstract":"In spite of their superior transport characteristics, InP HEMTs deliver lower output power than GaAs PHEMTs in the millimeter-wave regime. However, the superior power-added efficiency of InP HEMTs when compared with PHEMTs, makes this technology attractive for many applications. The reason for the lower power output of InP HEMTs is their relatively small off- and on-state breakdown voltage (BV). The authors review the state of knowledge regarding the physics of BV in InP HEMTs placing it in contrast with PHEMTs. They also discuss strategies for improving BV and the power output of InP HEMTs.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"8 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Breakdown in millimeter-wave power InP HEMTs: a comparison with PHEMTs\",\"authors\":\"J. D. del Alamo, M. Somerville\",\"doi\":\"10.1109/gaas.1998.722608\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In spite of their superior transport characteristics, InP HEMTs deliver lower output power than GaAs PHEMTs in the millimeter-wave regime. However, the superior power-added efficiency of InP HEMTs when compared with PHEMTs, makes this technology attractive for many applications. The reason for the lower power output of InP HEMTs is their relatively small off- and on-state breakdown voltage (BV). The authors review the state of knowledge regarding the physics of BV in InP HEMTs placing it in contrast with PHEMTs. They also discuss strategies for improving BV and the power output of InP HEMTs.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"8 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/gaas.1998.722608\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/gaas.1998.722608","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Breakdown in millimeter-wave power InP HEMTs: a comparison with PHEMTs
In spite of their superior transport characteristics, InP HEMTs deliver lower output power than GaAs PHEMTs in the millimeter-wave regime. However, the superior power-added efficiency of InP HEMTs when compared with PHEMTs, makes this technology attractive for many applications. The reason for the lower power output of InP HEMTs is their relatively small off- and on-state breakdown voltage (BV). The authors review the state of knowledge regarding the physics of BV in InP HEMTs placing it in contrast with PHEMTs. They also discuss strategies for improving BV and the power output of InP HEMTs.
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