Rashba自旋轨道耦合相互作用对硅盘状量子点能态的影响

Moulay Said El Kazdir, M. Rzaizi, K. El Assali, D. Abouelaoualim
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摘要

硅量子点(QDs)由于其弱自旋轨道相互作用(SOI)而被认为是自旋量子比特的一个很好的平台。事实上,由于量子约束,SOI产生了新的自旋特性。在这项工作中,我们研究了在外部磁场存在下,Rashba SOI和约束势对被限制在硅盘状量子点中的电子能谱的影响。研究了量子点尺寸、约束势和Rashba系数对能级的影响。我们使用有效质量近似来确定不同状态下的能级及其波函数。结果是在SOI存在和不存在的情况下磁场的函数。我们发现,随着磁场的不同,电子的能级表现得非常不同。在SOI存在和不存在的情况下,所有态的能量随磁场的增大而变化,每个能级分裂为两个能级,两个能级之间的能量差也随磁场的增大而增大。能级与Rashba系数成正比,与量子点的半径成反比。
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Effect of Rashba spin-orbit coupling interaction on energy states of Silicon disk-shaped quantum dot
Silicon quantum dots (QDs) are considered an excellent platform for spin qubits due to their weak spin-orbit interaction (SOI). Indeed, due to quantum confinement, novel spin properties arise from the SOI. In this work, we have studied the influence of the Rashba SOI and the confinement potential on the energy spectrum of an electron confined in a Silicon disk-shaped quantum dot, in the presence of an external magnetic field. The effects of the QD size, the confinement potential and the Rashba alpha coefficient on the energy levels are also studied. We used the effective mass approximation to determine the energy levels and their wave functions for different states. The results are presented as a function of the magnetic field in the presence and absence of SOI. We find that the energy levels of the electrons behave very differently depending on the magnetic field. The energy of all states changes with increasing magnetic field and each energy level splits into two and the energy difference between these two levels also increases with magnetic field, in the presence and absence of SOI. The energy levels are proportional to the Rashba alpha coefficient and inversely proportional to the radius of the QD.
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