{"title":"AlGaN/GaN HEMTs on sapphire","authors":"V. Kumar, I. Adesida","doi":"10.1109/ICCDCS.2002.1004070","DOIUrl":null,"url":null,"abstract":"This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and maximum frequency of oscillation (f/sub max/) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 /spl mu/m grown by MOCVD. Results for MBE-grown devices are also presented.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"174 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and maximum frequency of oscillation (f/sub max/) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 /spl mu/m grown by MOCVD. Results for MBE-grown devices are also presented.
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