Current-Voltage Characteristic Curves Addressing Non-Linear Kink-like Effects

NMOSFET devices fabricated by 0.18 micron process are studied through fitting current-voltage (I-V) characteristic curves. The conventional formulas well addressing I-V curves of MOSFET transistors have been technically modified and subtracted a Gaussian term to fit the non-linear kink-like effects, which is as seen in Sine-Gordon equation. In each triode region, the increase rates of current against VDS (the voltage bias between Drain and Source) seem like a half-side peak producing generated peak-like heat, which is quantized as phonons and apparently downgrades the electrical performances. The heat of peaks is shown to be like a Gaussian curve, which effectively reduces the mobility of carriers and thus suppresses the specific IDS. The extra parameters are introduced to achieve well-fitting curves.