G. Giakoustidis, F. Abudinén, K. Ackermann, P. Ahlburg, M. Albalawi, O. Alonso, L. Andricek, R. Ayad, Varghese Babu, Anselm Baur, F. Bernlochner, T. Bilka, A. Bolz, A. Bozek, C. Camien, A. C. Caldwell, L. Cao, V. Chekelian, Á. Diéguez, J. Dingfelder, Z. Doležal, M. Fras, A. Frey, M. Gabriel, K. Gadow, T. Gessler, D. Getzkow, L. L. Gioi, D. Greenwald, M. Heck, M. Hensel, M. Hoek, Stefan Huber, J. Kandra, P. Kapusta, R. Karl, Jasper Kehl, C. Kiesling, B. Kisielewski, D. Kittlinger, D. Klose, P. Kodyš, C. Koffmane, I. Konorov, Matthäus Krein, S. Krivokuca, T. Kuhr, S. Kurz, P. Kvasnička, J. S. Lange, K. Lautenbach, U. Leis, P. Leitl, D. Levit, G. Liemann, Qingyuan Liu, Zhen’An Liu, T. Lück, C. Marinas, S. Mccarney, H. Moser, D. Moya, F. Müller, F. Müller, C. Niebuhr, J. Ninkovic, B. Paschen, S. Paul, I. Perić, D. Pitzl, A. Rabusov, Markus Reif, S. Reiter, Rainer Richter, M. Ritter, M. Ritzert, J. Sanchez, B. Scavino, G. Schaller, J. Schmitz, M. Schnecke, F. Schopper, H. Schreeck, B. Schwenker, M. Schwickardi
{"title":"BELLE II像素检测器的状态","authors":"G. Giakoustidis, F. Abudinén, K. Ackermann, P. Ahlburg, M. Albalawi, O. Alonso, L. Andricek, R. Ayad, Varghese Babu, Anselm Baur, F. Bernlochner, T. Bilka, A. Bolz, A. Bozek, C. Camien, A. C. Caldwell, L. Cao, V. Chekelian, Á. Diéguez, J. Dingfelder, Z. Doležal, M. Fras, A. Frey, M. Gabriel, K. Gadow, T. Gessler, D. Getzkow, L. L. Gioi, D. Greenwald, M. Heck, M. Hensel, M. Hoek, Stefan Huber, J. Kandra, P. Kapusta, R. Karl, Jasper Kehl, C. Kiesling, B. Kisielewski, D. Kittlinger, D. Klose, P. Kodyš, C. Koffmane, I. Konorov, Matthäus Krein, S. Krivokuca, T. Kuhr, S. Kurz, P. Kvasnička, J. S. Lange, K. Lautenbach, U. Leis, P. Leitl, D. Levit, G. Liemann, Qingyuan Liu, Zhen’An Liu, T. Lück, C. Marinas, S. Mccarney, H. Moser, D. Moya, F. Müller, F. Müller, C. Niebuhr, J. Ninkovic, B. Paschen, S. Paul, I. Perić, D. Pitzl, A. Rabusov, Markus Reif, S. Reiter, Rainer Richter, M. Ritter, M. Ritzert, J. Sanchez, B. Scavino, G. Schaller, J. Schmitz, M. Schnecke, F. Schopper, H. Schreeck, B. Schwenker, M. Schwickardi","doi":"10.22323/1.420.0005","DOIUrl":null,"url":null,"abstract":"The Belle II experiment at the Super KEK B-factory (SuperKEKB) in Tsukuba, Japan, has been collecting 𝑒 + 𝑒 − collision data since March 2019. Operating at a record-breaking luminosity of up to 4 . 7 × 10 34 cm − 2 s − 1 , data corresponding to 424 fb − 1 has since been recorded. The Belle II Vertex Detector (VXD) is central to the Belle II detector and its physics program and plays a crucial role in reconstructing precise primary and decay vertices. It consists of the outer four-layer Silicon Vertex Detector (SVD) using double-sided silicon strips and the inner two-layer PiXel Detector (PXD) based on the Depleted P-channel Field Effect Transistor (DePFET) technology. The PXD DePFET structure combines signal generation and amplification within the pixels with a minimum pitch of ( 50 × 55 ) µ m 2 . A high gain and a high Signal-to-Noise Ratio (SNR) allow thinning the pixels to 75 µ m while retaining a high pixel hit efficiency of about 99 % for the Belle II","PeriodicalId":275608,"journal":{"name":"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Status of the BELLE II Pixel Detector\",\"authors\":\"G. Giakoustidis, F. Abudinén, K. Ackermann, P. Ahlburg, M. Albalawi, O. Alonso, L. Andricek, R. Ayad, Varghese Babu, Anselm Baur, F. Bernlochner, T. Bilka, A. Bolz, A. Bozek, C. Camien, A. C. Caldwell, L. Cao, V. Chekelian, Á. Diéguez, J. Dingfelder, Z. Doležal, M. Fras, A. Frey, M. Gabriel, K. Gadow, T. Gessler, D. Getzkow, L. L. Gioi, D. Greenwald, M. Heck, M. Hensel, M. Hoek, Stefan Huber, J. Kandra, P. Kapusta, R. Karl, Jasper Kehl, C. Kiesling, B. Kisielewski, D. Kittlinger, D. Klose, P. Kodyš, C. Koffmane, I. Konorov, Matthäus Krein, S. Krivokuca, T. Kuhr, S. Kurz, P. Kvasnička, J. S. Lange, K. Lautenbach, U. Leis, P. Leitl, D. Levit, G. Liemann, Qingyuan Liu, Zhen’An Liu, T. Lück, C. Marinas, S. Mccarney, H. Moser, D. Moya, F. Müller, F. Müller, C. Niebuhr, J. Ninkovic, B. Paschen, S. Paul, I. Perić, D. Pitzl, A. Rabusov, Markus Reif, S. Reiter, Rainer Richter, M. Ritter, M. Ritzert, J. Sanchez, B. Scavino, G. Schaller, J. Schmitz, M. Schnecke, F. Schopper, H. Schreeck, B. Schwenker, M. Schwickardi\",\"doi\":\"10.22323/1.420.0005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Belle II experiment at the Super KEK B-factory (SuperKEKB) in Tsukuba, Japan, has been collecting 𝑒 + 𝑒 − collision data since March 2019. Operating at a record-breaking luminosity of up to 4 . 7 × 10 34 cm − 2 s − 1 , data corresponding to 424 fb − 1 has since been recorded. The Belle II Vertex Detector (VXD) is central to the Belle II detector and its physics program and plays a crucial role in reconstructing precise primary and decay vertices. It consists of the outer four-layer Silicon Vertex Detector (SVD) using double-sided silicon strips and the inner two-layer PiXel Detector (PXD) based on the Depleted P-channel Field Effect Transistor (DePFET) technology. The PXD DePFET structure combines signal generation and amplification within the pixels with a minimum pitch of ( 50 × 55 ) µ m 2 . A high gain and a high Signal-to-Noise Ratio (SNR) allow thinning the pixels to 75 µ m while retaining a high pixel hit efficiency of about 99 % for the Belle II\",\"PeriodicalId\":275608,\"journal\":{\"name\":\"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.22323/1.420.0005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22323/1.420.0005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Belle II experiment at the Super KEK B-factory (SuperKEKB) in Tsukuba, Japan, has been collecting 𝑒 + 𝑒 − collision data since March 2019. Operating at a record-breaking luminosity of up to 4 . 7 × 10 34 cm − 2 s − 1 , data corresponding to 424 fb − 1 has since been recorded. The Belle II Vertex Detector (VXD) is central to the Belle II detector and its physics program and plays a crucial role in reconstructing precise primary and decay vertices. It consists of the outer four-layer Silicon Vertex Detector (SVD) using double-sided silicon strips and the inner two-layer PiXel Detector (PXD) based on the Depleted P-channel Field Effect Transistor (DePFET) technology. The PXD DePFET structure combines signal generation and amplification within the pixels with a minimum pitch of ( 50 × 55 ) µ m 2 . A high gain and a high Signal-to-Noise Ratio (SNR) allow thinning the pixels to 75 µ m while retaining a high pixel hit efficiency of about 99 % for the Belle II
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
