{"title":"Cu/sub /S纳米线阵列的制备及其场发射性能","authors":"Q.B. Wu, S. Ren, S. Deng, Jun Chen, N. Xu","doi":"10.1109/IVNC.2004.1354951","DOIUrl":null,"url":null,"abstract":"Large-area and well-aligned Cu/sub 2/S nanowire arrays were fabricated by gas-solid reaction. X-ray diffraction and scanning-electron microscopy (SEM) were employed to characterize the nanowire arrays. The Cu/sub 2/S nanowire arrays grown on copper film were 50-200 nm in diameter and several micrometers long. Also, the field emission characteristics of the nanowires were studied in this work.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation of aligned Cu/sub 2/S nanowire arrays and their field emission properties\",\"authors\":\"Q.B. Wu, S. Ren, S. Deng, Jun Chen, N. Xu\",\"doi\":\"10.1109/IVNC.2004.1354951\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Large-area and well-aligned Cu/sub 2/S nanowire arrays were fabricated by gas-solid reaction. X-ray diffraction and scanning-electron microscopy (SEM) were employed to characterize the nanowire arrays. The Cu/sub 2/S nanowire arrays grown on copper film were 50-200 nm in diameter and several micrometers long. Also, the field emission characteristics of the nanowires were studied in this work.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2004.1354951\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2004.1354951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Preparation of aligned Cu/sub 2/S nanowire arrays and their field emission properties
Large-area and well-aligned Cu/sub 2/S nanowire arrays were fabricated by gas-solid reaction. X-ray diffraction and scanning-electron microscopy (SEM) were employed to characterize the nanowire arrays. The Cu/sub 2/S nanowire arrays grown on copper film were 50-200 nm in diameter and several micrometers long. Also, the field emission characteristics of the nanowires were studied in this work.
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