{"title":"LWIR区域HgCdTe光电探测器的建模","authors":"P. Muralidharan, D. Vasileska, P. Wijewarnasuriya","doi":"10.1109/IWCE.2012.6242853","DOIUrl":null,"url":null,"abstract":"We have developed a computer program that simulates the electrical characteristics of a p+ - n HgCdTe photodetector. Using solutions to the Poisson and Continuity equations we investigate low temperature behavior to determine optimum working conditions to enhance detectivity. Our model considers complete Fermi - Dirac statistics, major recombination mechanisms, band to band tunneling, trap assisted tunneling and impact ionization. Device performance was analyzed as a function of doping and temperature. Simulations show detectivity >; 1011 Jones at 77 K for Hg0.78Cd0.22Te.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling of HgCdTe photodetectors in the LWIR region\",\"authors\":\"P. Muralidharan, D. Vasileska, P. Wijewarnasuriya\",\"doi\":\"10.1109/IWCE.2012.6242853\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a computer program that simulates the electrical characteristics of a p+ - n HgCdTe photodetector. Using solutions to the Poisson and Continuity equations we investigate low temperature behavior to determine optimum working conditions to enhance detectivity. Our model considers complete Fermi - Dirac statistics, major recombination mechanisms, band to band tunneling, trap assisted tunneling and impact ionization. Device performance was analyzed as a function of doping and temperature. Simulations show detectivity >; 1011 Jones at 77 K for Hg0.78Cd0.22Te.\",\"PeriodicalId\":375453,\"journal\":{\"name\":\"2012 15th International Workshop on Computational Electronics\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 15th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2012.6242853\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 15th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2012.6242853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
我们开发了一个计算机程序来模拟p+ - n HgCdTe光电探测器的电特性。利用泊松方程和连续性方程的解，我们研究了低温行为，以确定最佳工作条件，以提高探测。我们的模型考虑了完整的费米-狄拉克统计、主要的复合机制、带间隧穿、阱辅助隧穿和冲击电离。分析了掺杂和温度对器件性能的影响。模拟结果表明:探测性>;1011琼斯在77 K为Hg0.78Cd0.22Te。
Modeling of HgCdTe photodetectors in the LWIR region
We have developed a computer program that simulates the electrical characteristics of a p+ - n HgCdTe photodetector. Using solutions to the Poisson and Continuity equations we investigate low temperature behavior to determine optimum working conditions to enhance detectivity. Our model considers complete Fermi - Dirac statistics, major recombination mechanisms, band to band tunneling, trap assisted tunneling and impact ionization. Device performance was analyzed as a function of doping and temperature. Simulations show detectivity >; 1011 Jones at 77 K for Hg0.78Cd0.22Te.
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