Performance Optimization of Dual supply voltage level shifter using FINFET and CNTFET at 32nm technology

With bulk CMOS technology scaling below 100 nm, there is significant increase of leakage power in that. Multigate FET like FINFET and CNTFET (carbon Nano tube field effect transistor) are the devices to replace that because of improved drive strength and short channel behavior. This paper represents dual supply voltage level shifter which is capable of converting low input of voltage to high level. This proposes a comparative study of voltage level shifter at 32nm technology node of MOSFET, FINFET and CNTFET. Simulations results tells us that there is notable improvement at frequency 0.5Mz in average power and PDP of 7.50E-07 W and 3.57E-14 in FINFET and 9.58E-07 W and 2.45E − 14 in case of CNTFET with comparison of MOSFET.