氧化物界面的拓扑现象

Kavya Ravindran, Jayjit Kumar Dey, Aryan Keshri, B. Roul, S. .. Krupanidhi, Sujit Das
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引用次数: 0

摘要

氧化物界面上的拓扑现象吸引了科学界的关注,因为它具有丰富的物理性质,在高密度低能量非易失性存储器和自旋电子器件领域有着非常有利的应用。具有优越界面的原子控制超薄高质量薄膜的合成及其高分辨率实验装置的表征,以及与实验结果相匹配的高输出理论计算,使该领域的一些有前途的量子现象和奇异相的解释成为可能。在本文中,我们重点介绍了铁薄膜和异质结构中一些有趣的界面方面,包括磁skyrmions中的拓扑霍尔效应,应变依赖的层间磁相互作用,层间耦合介导的电子传导,非共线自旋织构的开关等。最后,对拓扑现象的理解、改进和优化进行了简要概述,并展望了未来的发展方向。
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Topological phenomena at the oxide interfaces
Topological phenomena at the oxide interfaces attract the scientific community for the fertile ground of exotic physical properties and highly favorable applications in the area of high-density low-energy nonvolatile memory and spintronic devices. Synthesis of atomically controlled ultrathin high-quality films with superior interfaces and their characterization by high resolution experimental set up along with high output theoretical calculations matching with the experimental results make this field possible to explain some of the promising quantum phenomena and exotic phases. In this review, we highlight some of the interesting interface aspects in ferroic thin films and heterostructures including the topological Hall effect in magnetic skyrmions, strain dependent interlayer magnetic interactions, interlayer coupling mediated electron conduction, switching of noncollinear spin texture etc. Finally, a brief overview followed by the relevant aspects and future direction for understanding, improving, and optimizing the topological phenomena for next generation applications are discussed.
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