路线图末尾的缺陷容忍度

M. Mishra, S. Goldstein
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引用次数: 2

摘要

随着特征尺寸缩小到接近个位数纳米尺寸,缺陷容错将变得越来越重要。无论芯片是采用自上而下的方法(如光刻)制造,还是采用自下而上的组装工艺(如化学组装电子纳米技术(CAEN))制造,都是如此。在本章中,我们检查了这种增加的缺陷率的后果,并描述了一种以可重构设备为中心的缺陷容忍方法,一种可扩展的测试方法,以及动态的放置和路由。我们总结了我们在这一领域的一些成果以及其他人的成果,并列举了使纳米级计算成为现实所需的一些未来研究方向。
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Defect tolerance at the end of the roadmap
As feature sizes shrink closer to single digit nanometer dimensions, defect tolerance will become increasingly important. This is true whether the chips are manufactured using top-down methods, such as photolithography, or bottom-up assembly processes such as Chemically Assembled Electronic Nanotechnology (CAEN). In this chapter, we examine the consequences of this increased rate of defects, and describe a defect tolerance methodology centered around reconfigurable devices, a scalable testing method, and dynamic place-and-route. We summarize some of our own results in this area as well as those of others, and enumerate some future research directions required to make nanometer-scale computing a reality.
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