超低功耗vco -性能特性和建模(特邀)

M. Jamal Deen, M. H. Kazemeini, S. Naseh
{"title":"超低功耗vco -性能特性和建模(特邀)","authors":"M. Jamal Deen, M. H. Kazemeini, S. Naseh","doi":"10.1109/ICCDCS.2002.1004021","DOIUrl":null,"url":null,"abstract":"The paper describes CMOS voltage controlled oscillators (VCOs) with ultra-low power capabilities. It presents a discussion of their performance characteristics and modeling using simple physics-based expressions. The oscillators have been designed in a commercial 0.18 /spl mu/m CMOS technology and the transistors in the VCOs operate from weak to strong inversion modes. They have been tested and found functional with supply voltages from 80 mV up to 1.8 V. Experimental results show that the VCO's power consumption is mainly dynamic for the whole range of supply voltages used and powers down to the nW regime has been achieved. A new and important feature of this VCO is the use of the substrate voltage as an additional control for the frequency tunability. In this way, a new VCO with two voltage controls for its operating frequency has been realized. The detailed experimental results and comparison to calculations are presented and discussed.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"148 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Ultra-low power VCOs - performance characteristics and modeling (invited)\",\"authors\":\"M. Jamal Deen, M. H. Kazemeini, S. Naseh\",\"doi\":\"10.1109/ICCDCS.2002.1004021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper describes CMOS voltage controlled oscillators (VCOs) with ultra-low power capabilities. It presents a discussion of their performance characteristics and modeling using simple physics-based expressions. The oscillators have been designed in a commercial 0.18 /spl mu/m CMOS technology and the transistors in the VCOs operate from weak to strong inversion modes. They have been tested and found functional with supply voltages from 80 mV up to 1.8 V. Experimental results show that the VCO's power consumption is mainly dynamic for the whole range of supply voltages used and powers down to the nW regime has been achieved. A new and important feature of this VCO is the use of the substrate voltage as an additional control for the frequency tunability. In this way, a new VCO with two voltage controls for its operating frequency has been realized. The detailed experimental results and comparison to calculations are presented and discussed.\",\"PeriodicalId\":416680,\"journal\":{\"name\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"volume\":\"148 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2002.1004021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

介绍了具有超低功耗能力的CMOS压控振荡器(VCOs)。讨论了它们的性能特征,并使用简单的基于物理的表达式进行建模。振荡器采用商用0.18 /spl mu/m CMOS技术设计,压控振荡器中的晶体管可从弱反转模式工作到强反转模式。它们已经过测试,并发现在电源电压从80 mV到1.8 V的情况下都能正常工作。实验结果表明,在所使用的电源电压范围内,VCO的功耗主要是动态的,并且可以实现功率降至nW状态。这种压控振荡器的一个新的重要特点是使用基板电压作为频率可调性的额外控制。通过这种方法,实现了一种工作频率具有双电压控制的新型压控振荡器。给出了详细的实验结果,并与计算结果进行了比较。
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Ultra-low power VCOs - performance characteristics and modeling (invited)
The paper describes CMOS voltage controlled oscillators (VCOs) with ultra-low power capabilities. It presents a discussion of their performance characteristics and modeling using simple physics-based expressions. The oscillators have been designed in a commercial 0.18 /spl mu/m CMOS technology and the transistors in the VCOs operate from weak to strong inversion modes. They have been tested and found functional with supply voltages from 80 mV up to 1.8 V. Experimental results show that the VCO's power consumption is mainly dynamic for the whole range of supply voltages used and powers down to the nW regime has been achieved. A new and important feature of this VCO is the use of the substrate voltage as an additional control for the frequency tunability. In this way, a new VCO with two voltage controls for its operating frequency has been realized. The detailed experimental results and comparison to calculations are presented and discussed.
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