一种具有过程和温度校准的新型时间寄存器

Orfeas Panetas-Felouris, S. Vlassis
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引用次数: 5

摘要

本文提出了一种适用于基于时间或时域信号处理的新型时间寄存器电路。该电路基于电容放电方法,并采用一种基于主从方法的新型校准回路对工艺过程和芯片温度变化进行补偿。该回路包含一个基于简单缺流逆变器逻辑的高速比较器以及一个三点阈值电压稳定回路。电路采用28nm三星FD-SOI工艺,在1V电源电压和10MHz工作频率下设计。仿真结果表明,在最坏情况下,在0°C和100°C之间的温度范围内,时间寄存器的电容电压放电斜率几乎恒定,而功耗仅为10μA。
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A novel time register with process and temperature calibration
This paper presents a novel time register circuit suitable for time-based or time-domain signal processing. The proposed circuit is based on the capacitor discharging method and is compensated against technology process and chip temperature variations using a novel calibration loop based on master-slave approach. The loop contains a high-speed comparator based on simple current-starved inverter logic along with a triple-point threshold voltage stabilization loop. The circuit is designed using 28nm Samsung FD-SOI process under 1V supply voltage with 10MHz operating frequency. Simulation results present an almost constant capacitor voltage discharging slope of the time register over worst case process corners and temperature between 0°C and 100°C while consuming only 10μA.
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