Multi BSF layer InGaP/GaAs high efficiency solar cell

Back Surface Field layer is very much important for both single and multi-junction solar cells for controlling the recombination rate. In this work multi BSF layers are used at both top and bottom cells to get higher external quantum efficiency from the cell. The work is done taking double junction InGaP/GaAs Solar cell and the optimization of the BSF layers is done using the computational numerical modeling with Silvaco ATLAS simulation technique. The structure, photo-generation rate, thickness of BSF layers is discussed in this paper. For this optimized cell structure, the maximum available short circuit current density is 17.35 mA/cm2 and is obtained at an open circuit voltage of 2.69 V which leads to a higher conversion efficiency.