纳米SOI mosfet的介观输运特性:库仑阻滞和局域化

Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI:10.1109/WOLTE.2002.1022457

Y. Omura, M. Yamamoto

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引用次数: 0

摘要

本文描述了具有6纳米厚硅层的50nm沟道SOI mosfet在1.1 K下的输运特性。为了验证电子局域化，从理论上估计了费米波长、初级界面形态的周期长度和理想回旋半径。结果表明，非周期粗糙度可能有助于安德森局域化，而界面形态的局部周期结构与库仑封锁有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mesoscopic transport characteristics of nano-scale SOI MOSFETs: coulomb blockade and localization

This paper describes the transport characteristics, measured at 1.1 K, of 50-nm-channel SOI MOSFETs with a 6-nm-thick silicon layer. To verify electron localization, Fermi wavelength, periodic length of primary interface morphology, and ideal cyclotron radius are estimated theoretically. It is shown that non-periodic roughness may contribute to Anderson localization while the local periodic structure of the interface morphology is associated with Coulomb blockade.

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Proceedings of the 5th European Workshop on Low Temperature Electronics

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