TiN/HfO2/SiO2/Si MOS栅堆击穿强度的初步研究

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI:10.1109/IRWS.2006.305231

R. Southwick, M. Elgin, G. Bersuker, R. Choi, W. B. Knowlton

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引用次数: 1

摘要

研究了氧化铪的完整性。时间零介电击穿试验，以确定击穿强度的电子栅注入在各种HfO2厚度。结果表明，击穿强度不是纯粹与电场或高k电压降有关，而是两者的结合。栅极堆的可靠性似乎随着HfO2层厚度的减小而提高

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Preliminary Study of the Breakdown Strength of TiN/HfO2/SiO2/Si MOS Gate Stacks

Hafnium oxide integrity is investigated. Time-zero dielectric breakdown tests to determine breakdown strength is performed for electron gate injection over a variety of HfO2 thicknesses. Results indicate the breakdown strength is not purely related to the electric field or voltage drop across the high-k but suggests a combination of both. Reliability of the gate stack seems to improve as the HfO2 layer thickness decreases

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2006 IEEE International Integrated Reliability Workshop Final Report

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