AlGaN/GaN-on-Silicon mos - hemt击穿电压为800 V，导态电阻为3 mΩ。cm2使用cmos兼容的无金工艺

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210119

Xinke Liu, Chunlei Zhan, K. W. Chan, Wei Liu, L. Tan, K. Teo, K. J. Chen, Y. Yeo

{"title":"AlGaN/GaN-on-Silicon mos - hemt击穿电压为800 V，导态电阻为3 mΩ。cm2使用cmos兼容的无金工艺","authors":"Xinke Liu, Chunlei Zhan, K. W. Chan, Wei Liu, L. Tan, K. Teo, K. J. Chen, Y. Yeo","doi":"10.1109/VLSI-TSA.2012.6210119","DOIUrl":null,"url":null,"abstract":"AlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. Ron of 3 mΩ.cm2 was obtained. Breakdown voltage VBR of 800 V was achieved, the highest for LGD below 10 μm for AlGaN/GaN/Si MOS-HEMTs fabricated using a gold-free process. The devices could be generally useful for cost-competitive power switching circuits with supply voltage in the range of several hundred volts.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process\",\"authors\":\"Xinke Liu, Chunlei Zhan, K. W. Chan, Wei Liu, L. Tan, K. Teo, K. J. Chen, Y. Yeo\",\"doi\":\"10.1109/VLSI-TSA.2012.6210119\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. Ron of 3 mΩ.cm2 was obtained. Breakdown voltage VBR of 800 V was achieved, the highest for LGD below 10 μm for AlGaN/GaN/Si MOS-HEMTs fabricated using a gold-free process. The devices could be generally useful for cost-competitive power switching circuits with supply voltage in the range of several hundred volts.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210119\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用与cmos兼容的无金工艺，在硅平台上实现了AlGaN/GaN mos - hemt。采用了CMOS中常用的工艺模块，包括栅极堆叠形成、蚀刻模块等。Ron (3) mΩ。得到Cm2。采用无金工艺制备的AlGaN/GaN/Si mos - hemt的击穿电压VBR为800 V，在LGD小于10 μm时达到最高。该器件通常可用于具有成本竞争力的电源电压在几百伏范围内的电源开关电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process

AlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. R_on of 3 mΩ.cm² was obtained. Breakdown voltage V_BR of 800 V was achieved, the highest for L_GD below 10 μm for AlGaN/GaN/Si MOS-HEMTs fabricated using a gold-free process. The devices could be generally useful for cost-competitive power switching circuits with supply voltage in the range of several hundred volts.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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