高分辨率显示器用自举结构a-Si:H薄膜晶体管的栅极驱动电路设计

Bo-Shu Chen, Ming-Yang Deng, Wei-Sheng Liao, Chih-Lung Lin
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引用次数: 0

摘要

本文提出了一种新型氢化非晶硅薄膜晶体管(a- si:H TFT)栅极驱动电路,该电路具有自举结构,可缩短输出波形的下降时间。在不增加驱动TFT长径比的情况下,通过自适应结构增大了栅极电压,提高了电路的驱动性能。与传统栅极驱动电路相比,输出波形下降时间缩短了20%。
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Design of Gate Driver Circuit Using a-Si:H Thin-Film Transistors with Bootstrapping Structure for High-Resolution Displays
This work proposes a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit with a bootstrapping structure to shorten the falling time of output waveforms. The driving capability of the proposed circuit is improved without increasing the aspect ratio of driving TFT owing to the enlarged gate voltages by bootstrapping structure. The falling time of output waveforms is reduced by 20% compared to that of conventional gate driver circuit.
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