基于BP神经网络和Smith预测器的先进5G系统芯片MOCVD工艺参数控制与仿真

Yu-Wen Zhou, Kuo-Chi Chang, Kai-Chun Chu, David Kwabena Amesimenu, Ntawiheba Jean Damour, Shoaib Ahmad, Shamim Md Obaydul Haque, Joram Gakiza, Abdalaziz Altayeb Ibrahim Omer
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引用次数: 5

摘要

在先进的5G芯片工艺系统中,MOCVD是现代晶圆制造中的关键膜工艺之一。MOCVD技术具有很高的应用价值和广阔的应用前景,主要应用于半导体材料、纳米材料等材料生长领域。MOCVD的应用领域使得其工艺对温度、流量、压力等参数控制的精度要求很高。然而,本文在传统Smith预测器的基础上,利用Simulink对系统进行了仿真,发现系统存在超调、调节时间长、控制效果不理想等问题。针对MOCVD参数控制问题,结合BP神经网络理论对控制器进行改进,得到了基于神经网络的Smith预测控制器。仿真结果表明,基于神经网络的智能PID控制对MOCVD温度、流量等参数的控制效果良好,超调量小,系统调节时间短。
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Advanced 5G system chip MOCVD process parameter control and simulation based on BP neural network and Smith predictor
in the advanced 5G chip process system, MOCVD is one of the key film processes in modern wafer manufacturing. MOCVD technology has a very high application value and broad application prospects that mainly used in semiconductor materials, nano materials and other material growth fields. The application field of MOCVD makes its process require high accuracy of temperature, flow, pressure and other parameters control. However, based on the conventional Smith predictor, this paper simulated the system with Simulink, and found that the system has overshoot and long regulation time, and the control effect is not ideal. In view of MOCVD parameter control, the BP neural network theory is combined to improve the controller, and a Smith predictive controller based on neural network is obtained. The simulation results show that the intelligent PID control based on neural network has a good effect on MOCVD temperature, flow and other parameters control, with lower overshoot and less system regulation time.
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