10ps光电采样系统

A. J. Low, J. Carroll
{"title":"10ps光电采样系统","authors":"A. J. Low, J. Carroll","doi":"10.1049/IJ-SSED.1978.0055","DOIUrl":null,"url":null,"abstract":"Mode-locked laser pulses of less than 10 ps duration are used to switch electrical gates made from microstrip line on high-resistivity silicon, in 10 ps. These gates can generate steps and pulses of around 100 V with 10 ps rise and fall times. Sampling can also be accomplished with a 10 ps aperture. By combining a group of such gates, along with the generation of appropriate laser pulses and timing signals, a sampling system is formed. Simple time-domain reflectometry measurements are made to demonstrate the system and to show that practical transitions to these gates can be made for signals at least up to 35 GHz.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"10ps optoelectronic sampling system\",\"authors\":\"A. J. Low, J. Carroll\",\"doi\":\"10.1049/IJ-SSED.1978.0055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Mode-locked laser pulses of less than 10 ps duration are used to switch electrical gates made from microstrip line on high-resistivity silicon, in 10 ps. These gates can generate steps and pulses of around 100 V with 10 ps rise and fall times. Sampling can also be accomplished with a 10 ps aperture. By combining a group of such gates, along with the generation of appropriate laser pulses and timing signals, a sampling system is formed. Simple time-domain reflectometry measurements are made to demonstrate the system and to show that practical transitions to these gates can be made for signals at least up to 35 GHz.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED.1978.0055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED.1978.0055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

摘要

锁模激光脉冲持续时间小于10ps,用于在10ps内切换由高电阻硅微带线制成的电门。这些门可以产生约100v的阶跃和脉冲,上升和下降时间为10ps。采样也可以用10ps光圈完成。通过组合一组这样的门,以及产生适当的激光脉冲和定时信号,就形成了一个采样系统。简单的时域反射测量进行了演示系统,并表明实际过渡到这些门可以至少达到35 GHz的信号。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
10ps optoelectronic sampling system
Mode-locked laser pulses of less than 10 ps duration are used to switch electrical gates made from microstrip line on high-resistivity silicon, in 10 ps. These gates can generate steps and pulses of around 100 V with 10 ps rise and fall times. Sampling can also be accomplished with a 10 ps aperture. By combining a group of such gates, along with the generation of appropriate laser pulses and timing signals, a sampling system is formed. Simple time-domain reflectometry measurements are made to demonstrate the system and to show that practical transitions to these gates can be made for signals at least up to 35 GHz.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Three-dimensional analysis of the mode properties of stripe-geometry D.H.lasers Phase and group indices for double heterostructure lasers Growth and characteristics of GaInAsp/Inp double heterostructure lasers Thermal properties of semiconductor lasers, and the interpretation of thermal-resistance measurements Simplified theory for mode locking in injection lasers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1