V. Andreev, V. Khvostikov, V. Rumyantsev, E. V. Paleeva, M. Shvarts
{"title":"单片双结AlGaAs/GaAs太阳能电池","authors":"V. Andreev, V. Khvostikov, V. Rumyantsev, E. V. Paleeva, M. Shvarts","doi":"10.1109/PVSC.1997.654239","DOIUrl":null,"url":null,"abstract":"Monolithic two-junction two-terminal AlGaAs/GaAs solar cells were grown during two-stage liquid phase epitaxy. At the first stage the GaAs-based bottom subcell with a tunnel junction was grown on n-GaAs(Sn) substrate. Test samples of such a cell without layers of the tunnel junction and with thin enough p-Al/sub 0.9/Ga/sub 0.1/As window layer demonstrated the efficiencies of 27.5% (AM1.5D, 140 Suns) and of about 25% (AM1.5D, 1000-1500 Suns). At the second stage, the top AlGaAs subcell was grown. The following parameters have been measured in tandems: V/sub OC/=2.53 V, FF=0.80 at 50 Suns (AM0). An efficiency of 20.3% (AM0) has been achieved.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Monolithic two-junction AlGaAs/GaAs solar cells\",\"authors\":\"V. Andreev, V. Khvostikov, V. Rumyantsev, E. V. Paleeva, M. Shvarts\",\"doi\":\"10.1109/PVSC.1997.654239\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Monolithic two-junction two-terminal AlGaAs/GaAs solar cells were grown during two-stage liquid phase epitaxy. At the first stage the GaAs-based bottom subcell with a tunnel junction was grown on n-GaAs(Sn) substrate. Test samples of such a cell without layers of the tunnel junction and with thin enough p-Al/sub 0.9/Ga/sub 0.1/As window layer demonstrated the efficiencies of 27.5% (AM1.5D, 140 Suns) and of about 25% (AM1.5D, 1000-1500 Suns). At the second stage, the top AlGaAs subcell was grown. The following parameters have been measured in tandems: V/sub OC/=2.53 V, FF=0.80 at 50 Suns (AM0). An efficiency of 20.3% (AM0) has been achieved.\",\"PeriodicalId\":251166,\"journal\":{\"name\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1997.654239\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic two-junction two-terminal AlGaAs/GaAs solar cells were grown during two-stage liquid phase epitaxy. At the first stage the GaAs-based bottom subcell with a tunnel junction was grown on n-GaAs(Sn) substrate. Test samples of such a cell without layers of the tunnel junction and with thin enough p-Al/sub 0.9/Ga/sub 0.1/As window layer demonstrated the efficiencies of 27.5% (AM1.5D, 140 Suns) and of about 25% (AM1.5D, 1000-1500 Suns). At the second stage, the top AlGaAs subcell was grown. The following parameters have been measured in tandems: V/sub OC/=2.53 V, FF=0.80 at 50 Suns (AM0). An efficiency of 20.3% (AM0) has been achieved.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
