J. Park, N. Kim, I. Song, K. Yee, D. Lee, S. H. Pyun, W. Jeong, J.W. Jang
{"title":"工作在1.5 μm的InAs/InGaAsP量子点半导体光放大器的增益动态","authors":"J. Park, N. Kim, I. Song, K. Yee, D. Lee, S. H. Pyun, W. Jeong, J.W. Jang","doi":"10.1063/1.3533365","DOIUrl":null,"url":null,"abstract":"We have studied gain dynamics of InAs/InGaAsP quantum dot semiconductor optical amplifier. The recovery time at the ground state was ~3 ps, much faster than the previously reported values at 1.5 um.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.5 μm\",\"authors\":\"J. Park, N. Kim, I. Song, K. Yee, D. Lee, S. H. Pyun, W. Jeong, J.W. Jang\",\"doi\":\"10.1063/1.3533365\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied gain dynamics of InAs/InGaAsP quantum dot semiconductor optical amplifier. The recovery time at the ground state was ~3 ps, much faster than the previously reported values at 1.5 um.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.3533365\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.3533365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.5 μm
We have studied gain dynamics of InAs/InGaAsP quantum dot semiconductor optical amplifier. The recovery time at the ground state was ~3 ps, much faster than the previously reported values at 1.5 um.