{"title":"MOSFET的电荷守恒宏模型","authors":"Joon-Yub Kim, R. Geiger","doi":"10.1109/MWSCAS.1995.504375","DOIUrl":null,"url":null,"abstract":"A charge conserving macromodel suitable for the simulation of the charge injection behavior of MOSFET switches is presented. Simulation results using the macromodel are compared with the experimental data in the literature. The performance of the macromodel at high switching speed is demonstrated.","PeriodicalId":165081,"journal":{"name":"38th Midwest Symposium on Circuits and Systems. Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A charge conserving macromodel for MOSFET's\",\"authors\":\"Joon-Yub Kim, R. Geiger\",\"doi\":\"10.1109/MWSCAS.1995.504375\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A charge conserving macromodel suitable for the simulation of the charge injection behavior of MOSFET switches is presented. Simulation results using the macromodel are compared with the experimental data in the literature. The performance of the macromodel at high switching speed is demonstrated.\",\"PeriodicalId\":165081,\"journal\":{\"name\":\"38th Midwest Symposium on Circuits and Systems. Proceedings\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"38th Midwest Symposium on Circuits and Systems. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.1995.504375\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"38th Midwest Symposium on Circuits and Systems. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.1995.504375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A charge conserving macromodel suitable for the simulation of the charge injection behavior of MOSFET switches is presented. Simulation results using the macromodel are compared with the experimental data in the literature. The performance of the macromodel at high switching speed is demonstrated.