{"title":"高效的3输入异或,适用于低压低功耗高速应用","authors":"Kuo-Hsing Cheng, Ven-Chieh Hsieh","doi":"10.1109/APASIC.1999.824054","DOIUrl":null,"url":null,"abstract":"A new 3-input XOR gate based upon the pass transistor design methodology for low-voltage, low-voltage high-speed applications is proposed. Five existing circuits are compared with the new proposed gate. It is shown that the proposed new circuit has at least 50% improvement in power-delay product than that of the CPL structure and the CMOS structure. Moreover, the proposed new circuit can also be operated as low as 1 V. Thus, the proposed new circuit is suitable for low-power, low-voltage and high-speed applications.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High efficient 3-input XOR for low-voltage low-power high-speed applications\",\"authors\":\"Kuo-Hsing Cheng, Ven-Chieh Hsieh\",\"doi\":\"10.1109/APASIC.1999.824054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new 3-input XOR gate based upon the pass transistor design methodology for low-voltage, low-voltage high-speed applications is proposed. Five existing circuits are compared with the new proposed gate. It is shown that the proposed new circuit has at least 50% improvement in power-delay product than that of the CPL structure and the CMOS structure. Moreover, the proposed new circuit can also be operated as low as 1 V. Thus, the proposed new circuit is suitable for low-power, low-voltage and high-speed applications.\",\"PeriodicalId\":346808,\"journal\":{\"name\":\"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APASIC.1999.824054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APASIC.1999.824054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High efficient 3-input XOR for low-voltage low-power high-speed applications
A new 3-input XOR gate based upon the pass transistor design methodology for low-voltage, low-voltage high-speed applications is proposed. Five existing circuits are compared with the new proposed gate. It is shown that the proposed new circuit has at least 50% improvement in power-delay product than that of the CPL structure and the CMOS structure. Moreover, the proposed new circuit can also be operated as low as 1 V. Thus, the proposed new circuit is suitable for low-power, low-voltage and high-speed applications.