{"title":"高铝成分肖特基型AlGaN光电二极管的雪崩倍增","authors":"Huan Yan, Changshan Liu, Hailong Wang, Zhenhua Zhang, Meng Chen, Hao Jiang","doi":"10.1109/ACP.2018.8596037","DOIUrl":null,"url":null,"abstract":"Shottky–type Al0.6Ga0.4N solar-blind avalanche photodiodes have been fabricated and characterized under front and back illuminated conditions. The photodiodes exhibited dark currents below 1pA in the measuring range. Photocurrent under front illumination was lower than photocurrent under back illumination in the reverse-bias region below 35 V, but then exceeded the latter as the reverse bias became larger. Impact ionization coefficient for electrons is larger than that for holes as derived from the gain-voltage curves under the front and back illuminations.","PeriodicalId":431579,"journal":{"name":"2018 Asia Communications and Photonics Conference (ACP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Avalanche Multiplication in Schottky-type AlGaN Photodiode with High Al-composition\",\"authors\":\"Huan Yan, Changshan Liu, Hailong Wang, Zhenhua Zhang, Meng Chen, Hao Jiang\",\"doi\":\"10.1109/ACP.2018.8596037\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Shottky–type Al0.6Ga0.4N solar-blind avalanche photodiodes have been fabricated and characterized under front and back illuminated conditions. The photodiodes exhibited dark currents below 1pA in the measuring range. Photocurrent under front illumination was lower than photocurrent under back illumination in the reverse-bias region below 35 V, but then exceeded the latter as the reverse bias became larger. Impact ionization coefficient for electrons is larger than that for holes as derived from the gain-voltage curves under the front and back illuminations.\",\"PeriodicalId\":431579,\"journal\":{\"name\":\"2018 Asia Communications and Photonics Conference (ACP)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Asia Communications and Photonics Conference (ACP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ACP.2018.8596037\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Asia Communications and Photonics Conference (ACP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ACP.2018.8596037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Avalanche Multiplication in Schottky-type AlGaN Photodiode with High Al-composition
Shottky–type Al0.6Ga0.4N solar-blind avalanche photodiodes have been fabricated and characterized under front and back illuminated conditions. The photodiodes exhibited dark currents below 1pA in the measuring range. Photocurrent under front illumination was lower than photocurrent under back illumination in the reverse-bias region below 35 V, but then exceeded the latter as the reverse bias became larger. Impact ionization coefficient for electrons is larger than that for holes as derived from the gain-voltage curves under the front and back illuminations.
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