{"title":"基于0.15 μm p-HEMT GaAs技术的15 GHz宽带中功率放大器设计","authors":"S. Rasidah, N. Samsuri, N. Kushairi, N. A. Ngah","doi":"10.1109/RSM.2013.6706486","DOIUrl":null,"url":null,"abstract":"This paper presents a thorough design of 15 GHz Ku-Band medium Power Amplifier (MPA). The technology used for this design is 0.15 μm GaAs p-HEMT technology from WIN semiconductor. The type of active device selected for this design is from the depletion mode p-HEMT. The device consumes 4.5 V of voltage supply and -0.2 V of DC bias. At operating frequency of 15 GHz, the circuit is design to have optimum power with 50 Ω impedance matching for both input and output network, high input and output return loss, high small signal gain, linear output power and high power aided efficiency (PAE).","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"15 GHz medium power amplifier design based On 0.15 μm p-HEMT GaAs technology for wideband applications\",\"authors\":\"S. Rasidah, N. Samsuri, N. Kushairi, N. A. Ngah\",\"doi\":\"10.1109/RSM.2013.6706486\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a thorough design of 15 GHz Ku-Band medium Power Amplifier (MPA). The technology used for this design is 0.15 μm GaAs p-HEMT technology from WIN semiconductor. The type of active device selected for this design is from the depletion mode p-HEMT. The device consumes 4.5 V of voltage supply and -0.2 V of DC bias. At operating frequency of 15 GHz, the circuit is design to have optimum power with 50 Ω impedance matching for both input and output network, high input and output return loss, high small signal gain, linear output power and high power aided efficiency (PAE).\",\"PeriodicalId\":346255,\"journal\":{\"name\":\"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSM.2013.6706486\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2013.6706486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
15 GHz medium power amplifier design based On 0.15 μm p-HEMT GaAs technology for wideband applications
This paper presents a thorough design of 15 GHz Ku-Band medium Power Amplifier (MPA). The technology used for this design is 0.15 μm GaAs p-HEMT technology from WIN semiconductor. The type of active device selected for this design is from the depletion mode p-HEMT. The device consumes 4.5 V of voltage supply and -0.2 V of DC bias. At operating frequency of 15 GHz, the circuit is design to have optimum power with 50 Ω impedance matching for both input and output network, high input and output return loss, high small signal gain, linear output power and high power aided efficiency (PAE).
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