超低相位噪声x波段振荡器的研制

R. Boudot, S. Gribaldo, Y. Gruson, N. Bazin, E. Rubiola, O. Llopis, V. Giordano
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引用次数: 3

摘要

本文报道了一种由室温高q低语通道模式(WGM)蓝宝石谐振器和超低相位噪声维持放大器组成的低相位噪声x波段振荡器的设计和测量。谐振器的热配置经过优化,热频率灵敏度为-0.05 ppm/K。紧凑的微带双行为谐振器(DBR)滤波器已被实现以抑制空腔杂散模式。高性能商用放大器已经过测试。由于相位噪声低,对振子的测量需要互相关和一些特殊的解决方案。x波段振荡器的典型相位噪声低至-36 dB。rad2/Hz在1hz傅立叶频率下,-145 dB。rad 2/Hz在10 kHz偏移和-160 dB。在距载波100khz处测量了rad2/Hz。同时,两款基于Si-SiGe级联晶体管的优秀独创双级放大器(功率增益=8.2 dB),相位噪声性能:-168 dB。rad2/Hz (100kHz偏移)已被设计,精确建模(非线性和噪声建模),并由于专用的CAD技术进行了优化
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Development of Ultra Low Phase Noise X-Band Oscillators
This paper reports on the design and the measurement of low phase noise X-band oscillators combining a room temperature high-Q whispering gallery mode (WGM) sapphire resonator and an ultra-low phase noise sustaining amplifier. The resonator thermal configuration has been optimized leading to a thermal frequency sensitivity of -0.05 ppm/K. Compact microstrip DBR (dual behavior resonators) filters have been realized to suppress cavity spurious modes. High performance commercially available amplifiers have been tested. Owing to the low phase noise, the measurement of oscillators requires cross-correlation and some unusual solutions. X-band oscillators typical phase noise as low as -36 dB.rad2/Hz at 1 Hz Fourier frequency, -145 dB.rad 2/Hz at 10 kHz offset and -160 dB.rad2/Hz at 100 kHz from the carrier have been measured. Parallely, two excellent and original double stage amplifiers based on a Si-SiGe transistors cascade (power gain=8.2 dB - phase noise performances : -168 dB.rad2/Hz at 100kHz offset) have been designed, precisely modeled (non-linear and noise modeling) and optimized thanks to dedicated CAD techniques
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