Pub Date : 2006-06-05DOI: 10.1109/FREQ.2006.275462
Shouhua Huang, M. Calhoun, R. Tjoelker
An array of three antennas has recently been developed at the NASA Jet Propulsion Laboratory capable of detecting signals at X and Ka band. The array requires a common frequency reference and high precision phase alignment to correlate received signals. Frequency and timing references are presently provided from a remotely located hydrogen maser and clock through a combination of commercially and custom developed optical links. The selected laser, photo-detector, and fiber components have been tested under anticipated thermal and simulated antenna rotation conditions. The resulting stability limitations due to thermal perturbations or induced stress on the optical fiber have been characterized. Distribution of the X-band local oscillator includes a loop back and precision phase monitor to enable correlation of signals received from each antenna
{"title":"Optical Links and RF Distribution for Antenna Arrays","authors":"Shouhua Huang, M. Calhoun, R. Tjoelker","doi":"10.1109/FREQ.2006.275462","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275462","url":null,"abstract":"An array of three antennas has recently been developed at the NASA Jet Propulsion Laboratory capable of detecting signals at X and Ka band. The array requires a common frequency reference and high precision phase alignment to correlate received signals. Frequency and timing references are presently provided from a remotely located hydrogen maser and clock through a combination of commercially and custom developed optical links. The selected laser, photo-detector, and fiber components have been tested under anticipated thermal and simulated antenna rotation conditions. The resulting stability limitations due to thermal perturbations or induced stress on the optical fiber have been characterized. Distribution of the X-band local oscillator includes a loop back and precision phase monitor to enable correlation of signals received from each antenna","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129380084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-05DOI: 10.1109/FREQ.2006.275438
J. Dick, N. Yu
We present the design for a phase-modulated opto electronic oscillator (OEO) that incorporates asymmetric Mach-Zehnder (AMZ) interferometers as phase demodulators together with PM modulation suppression. The new design promises to obtain in the electro-optical domain the low-noise advantages previously achieved in RF and microwave oscillators by the use of carrier suppression but which have been achieved only to a limited extent in OEO's
{"title":"A New OEO Design Using Optical Phase Modulation and Modulation Suppression","authors":"J. Dick, N. Yu","doi":"10.1109/FREQ.2006.275438","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275438","url":null,"abstract":"We present the design for a phase-modulated opto electronic oscillator (OEO) that incorporates asymmetric Mach-Zehnder (AMZ) interferometers as phase demodulators together with PM modulation suppression. The new design promises to obtain in the electro-optical domain the low-noise advantages previously achieved in RF and microwave oscillators by the use of carrier suppression but which have been achieved only to a limited extent in OEO's","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"132 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133684979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-04DOI: 10.1109/FREQ.2006.275386
N. Nomura, Y. Aoyagi, Chao-Kai Chang, K. Asano, Y. Sekine
Recent research shows that stable frequency is required to improve efficiency in the high frequency range. A high frequency oscillator has been required for the development of radio communications, measurement equipment, etc. Generally, the crystal oscillator is excellent in short-term frequency stability, and is being applied to telecommunication equipment, information technology, etc. On the other hand, the quartz resonator, which was developed for high frequency range, is aimed at being used in systems for the next generation. The quartz resonator with the high frequency range requires a steady oscillator to oscillate in high frequency range. Therefore, it is very difficult to use a Colpitts-type crystal oscillator in the high frequency range. It requires more negative resistance on the crystal oscillator circuit. In this paper, we suggest a method to decrease Miller capacitance of the transistor used for the conventional Colpitts-type crystal oscillator. Next, we show a new Colpitts-type crystal oscillator, which can obtain a negative resistance value in a gigahertz frequency band. Analyzing the equivalent circuit clarifies the effects of the proposed circuit compared to the conventional Colpitts-type crystal oscillator
{"title":"A Colpitts-Type Crystal Oscillator for Gigahertz Frequency","authors":"N. Nomura, Y. Aoyagi, Chao-Kai Chang, K. Asano, Y. Sekine","doi":"10.1109/FREQ.2006.275386","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275386","url":null,"abstract":"Recent research shows that stable frequency is required to improve efficiency in the high frequency range. A high frequency oscillator has been required for the development of radio communications, measurement equipment, etc. Generally, the crystal oscillator is excellent in short-term frequency stability, and is being applied to telecommunication equipment, information technology, etc. On the other hand, the quartz resonator, which was developed for high frequency range, is aimed at being used in systems for the next generation. The quartz resonator with the high frequency range requires a steady oscillator to oscillate in high frequency range. Therefore, it is very difficult to use a Colpitts-type crystal oscillator in the high frequency range. It requires more negative resistance on the crystal oscillator circuit. In this paper, we suggest a method to decrease Miller capacitance of the transistor used for the conventional Colpitts-type crystal oscillator. Next, we show a new Colpitts-type crystal oscillator, which can obtain a negative resistance value in a gigahertz frequency band. Analyzing the equivalent circuit clarifies the effects of the proposed circuit compared to the conventional Colpitts-type crystal oscillator","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115152454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-04DOI: 10.1109/FREQ.2006.275330
J. Vig
This tutorial reviews the subject of digital measurements of clocks and oscillators. It focuses primarily on the precision measurement of phase and the use of these measurements in estimating phase and frequency and common statistics such as the Allan deviation and the spectral density of phase. The subject matter includes direct counting, interpolating counters, dividers, heterodyne conversion, and dual-mixer systems. Biases in the measurements caused by aliasing and measurement quantization are evaluated. Analog techniques, which are used primarily to evaluate phase noise, are covered in a related tutorial.
{"title":"Tutorial Session 1B - Introduction to Quartz Frequency Standards","authors":"J. Vig","doi":"10.1109/FREQ.2006.275330","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275330","url":null,"abstract":"This tutorial reviews the subject of digital measurements of clocks and oscillators. It focuses primarily on the precision measurement of phase and the use of these measurements in estimating phase and frequency and common statistics such as the Allan deviation and the spectral density of phase. The subject matter includes direct counting, interpolating counters, dividers, heterodyne conversion, and dual-mixer systems. Biases in the measurements caused by aliasing and measurement quantization are evaluated. Analog techniques, which are used primarily to evaluate phase noise, are covered in a related tutorial.","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"88 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120818852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-04DOI: 10.1109/FREQ.2006.275497
E. Courjon, N. Bodin, G. Lengaigne, L. Gauthier-Manuel, W. Daniau, S. Ballandras, P. Paruch, J. Triscone, J. Hauden
The development of piezoelectric transducers based on periodically poled ferroelectrics domains is investigated. Optical quality Z-cut LiNbO3 wafers have been used for the fabrication of test devices operating in the range 7-70 MHz. The fabrication process is detailed and characterization results are reported. A very good agreement between theoretical predictions achieved by periodic finite element analysis and experiments is observed, allowing for a precise identification of the excited modes
{"title":"Fabrication of periodically poled domains transducers on LiNbO3","authors":"E. Courjon, N. Bodin, G. Lengaigne, L. Gauthier-Manuel, W. Daniau, S. Ballandras, P. Paruch, J. Triscone, J. Hauden","doi":"10.1109/FREQ.2006.275497","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275497","url":null,"abstract":"The development of piezoelectric transducers based on periodically poled ferroelectrics domains is investigated. Optical quality Z-cut LiNbO3 wafers have been used for the fabrication of test devices operating in the range 7-70 MHz. The fabrication process is detailed and characterization results are reported. A very good agreement between theoretical predictions achieved by periodic finite element analysis and experiments is observed, allowing for a precise identification of the excited modes","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126091102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-04DOI: 10.1109/FREQ.2006.275430
J. Stalnaker, S. Diddams, K. Kim, L. Hollberg, E. Donley, T. Heavner, S. Jefferts, F. Levi, T. Parker, J. Bergquist, W. Itano, M. Jensen, L. Lorini, W. Oskay, T. Fortier
We report the technical details specific to our recent measurements of the optical frequency of the mercury single-ion frequency standard in terms of the SI second as realized by the NIST-F1 cesium fountain clock. In these measurements the total fractional uncertainty is ap 10-15, limited by the statistical measurement uncertainty. In this paper we will address the techniques employed for the optical-to-microwave comparison itself, which had an estimated fractional uncertainty of ap 3 times 10-16, limited by the stability of the electronics used for the comparison
{"title":"Absolute Optical Frequency Measurements with a Fractional Frequency Uncertainty at 1 × 10-15","authors":"J. Stalnaker, S. Diddams, K. Kim, L. Hollberg, E. Donley, T. Heavner, S. Jefferts, F. Levi, T. Parker, J. Bergquist, W. Itano, M. Jensen, L. Lorini, W. Oskay, T. Fortier","doi":"10.1109/FREQ.2006.275430","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275430","url":null,"abstract":"We report the technical details specific to our recent measurements of the optical frequency of the mercury single-ion frequency standard in terms of the SI second as realized by the NIST-F1 cesium fountain clock. In these measurements the total fractional uncertainty is ap 10-15, limited by the statistical measurement uncertainty. In this paper we will address the techniques employed for the optical-to-microwave comparison itself, which had an estimated fractional uncertainty of ap 3 times 10-16, limited by the stability of the electronics used for the comparison","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123714079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-04DOI: 10.1109/FREQ.2006.275417
I. Avramov
This work presents the design and performance of a 100 MHz crystal controlled comb spectrum oscillator (CCCSO) which operates on 1.25V supply voltage according to the "step-up" converter principle and generates strong harmonics in the lower GHz range. The CCCSO is intended for improving the frequency stability and close-in phase noise of surface acoustic wave (SAW) and surface transverse wave (STW) oscillators by using an injection locking technique, thus making them as stable as a bulk acoustic wave (BAW) crystal oscillator. With -6 dBm of power at its 10-th harmonic, the CCCSO provides safe lock over a (-40 to +85) deg. C temperature range in a low-voltage 1 GHz STW oscillator with a loop power of 14 dBm, also operating according to the "step-up" converter principle. After injection locking, the short-term stability of the STW oscillator and its thermal stability improve by an order of magnitude as a result of BAW crystal stabilization in the CCCSO. The entire injection locked system is operated on 1.25V supply voltage, consumes 90 mA of DC current, generates 4 dBm of output power at 1 GHz and is expected to provide a thermal noise floor of -170 dBc/Hz
{"title":"Low-voltage, Crystal Controlled Comb Spectrum Oscillator for Injection Locked STW Based Clocks with Improved Stability","authors":"I. Avramov","doi":"10.1109/FREQ.2006.275417","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275417","url":null,"abstract":"This work presents the design and performance of a 100 MHz crystal controlled comb spectrum oscillator (CCCSO) which operates on 1.25V supply voltage according to the \"step-up\" converter principle and generates strong harmonics in the lower GHz range. The CCCSO is intended for improving the frequency stability and close-in phase noise of surface acoustic wave (SAW) and surface transverse wave (STW) oscillators by using an injection locking technique, thus making them as stable as a bulk acoustic wave (BAW) crystal oscillator. With -6 dBm of power at its 10-th harmonic, the CCCSO provides safe lock over a (-40 to +85) deg. C temperature range in a low-voltage 1 GHz STW oscillator with a loop power of 14 dBm, also operating according to the \"step-up\" converter principle. After injection locking, the short-term stability of the STW oscillator and its thermal stability improve by an order of magnitude as a result of BAW crystal stabilization in the CCCSO. The entire injection locked system is operated on 1.25V supply voltage, consumes 90 mA of DC current, generates 4 dBm of output power at 1 GHz and is expected to provide a thermal noise floor of -170 dBc/Hz","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114412573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-04DOI: 10.1109/FREQ.2006.275475
J. Camparo
Stabilization of the radiowave power driving an RF-discharge lamp has important implications for the long-term stability of atomic clocks. Here, the authors demonstrate a technique in which the lamp's plasma acts as a probe of radiowave power, and provides a correction signal for active rf-power control. The technique takes advantage of the resonant nature of forced ion waves in the plasma and their observation in the lamp's optical emission. Following a discussion of lamp stabilization using ion waves, we consider the question of how the induced oscillations might affect clock performance via the light shift. We argue that the amplitude of the oscillations is small enough so that they would at most lead to frequency instability at the 10-15 level
{"title":"Lamp Stabilization Using Ion Waves: Smart-Clock Technology to Eliminate Light-Shift Variations","authors":"J. Camparo","doi":"10.1109/FREQ.2006.275475","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275475","url":null,"abstract":"Stabilization of the radiowave power driving an RF-discharge lamp has important implications for the long-term stability of atomic clocks. Here, the authors demonstrate a technique in which the lamp's plasma acts as a probe of radiowave power, and provides a correction signal for active rf-power control. The technique takes advantage of the resonant nature of forced ion waves in the plasma and their observation in the lamp's optical emission. Following a discussion of lamp stabilization using ion waves, we consider the question of how the induced oscillations might affect clock performance via the light shift. We argue that the amplitude of the oscillations is small enough so that they would at most lead to frequency instability at the 10-15 level","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124110788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-04DOI: 10.1109/FREQ.2006.275333
Jun Ye
{"title":"Tutorial Session 4B - Optical Frequency Measurement & Synthesis","authors":"Jun Ye","doi":"10.1109/FREQ.2006.275333","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275333","url":null,"abstract":"","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"2003 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125768427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-06-04DOI: 10.1109/FREQ.2006.275376
T. Metcalf, B. Houston, J. E. Butler, T. Feygelson
Measurements of the mechanical properties - internal friction and shear modulus - of several nanocrystalline diamond films grown on silicon resonator substrates is reported. The internal friction measurements of 0.5 mum boron-doped and boron-free nanocrystalline diamond films show that the boron concentration does not appear to be correlated with the previously reported internal friction peak at 1-2 K. Rather, a heavily boron-doped film appears to have an internal friction peak at 10 K. The low-temperature internal friction of these films is consistent with that of films reported upon earlier, and is in the range 2 times 10-6 les Q-1 les 6 times 10-6
本文报道了在硅谐振器衬底上生长的几种纳米晶金刚石薄膜的力学性能-内摩擦和剪切模量-的测量。对掺硼和无硼纳米晶金刚石薄膜的内摩擦测量表明，硼浓度与先前报道的1-2 K内摩擦峰无关。相反，大量掺硼的薄膜在10 K处出现内摩擦峰。这些薄膜的低温内耗与之前报道的薄膜一致，在2 × 10-6 les Q-1 les 6 × 10-6的范围内
{"title":"Low temperature mechanical properties of nanocrystalline diamond films","authors":"T. Metcalf, B. Houston, J. E. Butler, T. Feygelson","doi":"10.1109/FREQ.2006.275376","DOIUrl":"https://doi.org/10.1109/FREQ.2006.275376","url":null,"abstract":"Measurements of the mechanical properties - internal friction and shear modulus - of several nanocrystalline diamond films grown on silicon resonator substrates is reported. The internal friction measurements of 0.5 mum boron-doped and boron-free nanocrystalline diamond films show that the boron concentration does not appear to be correlated with the previously reported internal friction peak at 1-2 K. Rather, a heavily boron-doped film appears to have an internal friction peak at 10 K. The low-temperature internal friction of these films is consistent with that of films reported upon earlier, and is in the range 2 times 10-6 les Q-1 les 6 times 10-6","PeriodicalId":445945,"journal":{"name":"2006 IEEE International Frequency Control Symposium and Exposition","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133971013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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