{"title":"低成本，3-7 GHz, 1/2瓦MMIC GaAs放大器","authors":"S. Moghe, R. Genin","doi":"10.1109/MCS.1986.1114470","DOIUrl":null,"url":null,"abstract":"A low cost, 3-7 GHz, 1/2 Watt MMIC GaAs amplifier has been successfully designed and tested. The amplifier features small chip size (1.2 mm sq.), high gain (12 +-1.5 dB), high power added efficiency (20%), good RF yield (57%) and high tolerance to process variations. Packaged amplifiers were built with this chip for both the 2-6 GHz and the 5.9-6.4 GHz bands. Saturated output power of 25 dBm was achieved in the 2-6 GHz band, and 27 dBm in the 5.9-6.4 GHz band.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Low Cost, 3-7 GHz, 1/2 Watt MMIC GaAs Amplifier\",\"authors\":\"S. Moghe, R. Genin\",\"doi\":\"10.1109/MCS.1986.1114470\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low cost, 3-7 GHz, 1/2 Watt MMIC GaAs amplifier has been successfully designed and tested. The amplifier features small chip size (1.2 mm sq.), high gain (12 +-1.5 dB), high power added efficiency (20%), good RF yield (57%) and high tolerance to process variations. Packaged amplifiers were built with this chip for both the 2-6 GHz and the 5.9-6.4 GHz bands. Saturated output power of 25 dBm was achieved in the 2-6 GHz band, and 27 dBm in the 5.9-6.4 GHz band.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1986.1114470\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low cost, 3-7 GHz, 1/2 Watt MMIC GaAs amplifier has been successfully designed and tested. The amplifier features small chip size (1.2 mm sq.), high gain (12 +-1.5 dB), high power added efficiency (20%), good RF yield (57%) and high tolerance to process variations. Packaged amplifiers were built with this chip for both the 2-6 GHz and the 5.9-6.4 GHz bands. Saturated output power of 25 dBm was achieved in the 2-6 GHz band, and 27 dBm in the 5.9-6.4 GHz band.
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