针对运行不稳定性的IEGT设计理念及其对应用的影响

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856765

I. Omura, T. Demon, Toshiyuki Miyanagi, T. Ogura, H. Ohashi

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引用次数: 20

摘要

IEGT(注入增强栅极晶体管)和HV-IGBT本身就不稳定，会在并联芯片或封装之间产生有害的电流拥挤和振荡。不稳定性问题已成为器件设计和应用中的关键问题。本文将描述不稳定的机理，并针对该问题提出器件和封装设计的有效解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEGT design concept against operation instability and its impact to application

IEGT's (Injection Enhanced Gate transistors) and HV-IGBT's are inherently unstable inducing harmful current crowding and oscillation among paralleled chips or packages. The instability problem has become crucial in device design and application. This paper will describe the mechanism of the instability and propose effective solutions for device and package design against the problem.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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