溅射NiCr薄膜微加热器的电学性能

Ting Wu, Jingquan Liu, Shui-Dong Jiang, Bin Xu, Bin Yang, Hongying Zhu, Chunsheng Yang
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引用次数: 3

摘要

采用直流磁控溅射技术将NiCr (80/20 at.%)薄膜作为低温加热器沉积在SiO2/Si衬底上。在不同条件下进行一系列退火处理后,研究了薄膜的电学性能和微观结构。采用x射线衍射仪(XRD)和扫描电镜(SEM)对膜的结晶度和组成进行了分析。在氮气环境中250℃退火后,薄膜由结晶变为非晶态,退火条件对薄膜的电阻率和电阻温度系数(TCR)有显著影响。在N2中250℃退火9 min后,样品的TCR在20K时为9.23 ppm/K,最终确定为最佳结果。
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Electrical properties of micro-heaters using sputtered NiCr thin film
NiCr (80/20 at.%) thin films were deposited on SiO2/Si substrates as a cryonetic heater by DC magnetron sputtering technique. After a series of annealing treatments under various conditions, the electrical properties and microstructure of the films were investigated. The crystallinity and composition of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The films are changed from crystalline to amorphous phase after annealing at 250°C in nitrogen ambient and the annealing conditions have a significant effect on the resistivity and temperature coefficient of resistance (TCR) of the films. TCR of the samples annealed at 250°C for 9 minutes in N2 shows 9.23 ppm/K at 20K which is finally confirmed as the optimal result.
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