电路可靠性仿真的紧凑建模:历史和工业观点

P. M. Lee
{"title":"电路可靠性仿真的紧凑建模:历史和工业观点","authors":"P. M. Lee","doi":"10.1109/IRPS.2013.6531941","DOIUrl":null,"url":null,"abstract":"This paper provides a historical background of the first developments of compact modeling for circuit-level reliability simulation at UC Berkeley, and the subsequent implementation into the BERT reliability simulator more than 20 years ago. A brief description of the advancement in the technology since then is given, and some industrial perspectives are summarized concerning how such a tool can be used to effectively optimize product design while ensuring reliability, as well as clarifying issues which still remain in the industrial design environment.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Compact modeling for simulation of circuit reliability: Historical and industrial perspectives\",\"authors\":\"P. M. Lee\",\"doi\":\"10.1109/IRPS.2013.6531941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides a historical background of the first developments of compact modeling for circuit-level reliability simulation at UC Berkeley, and the subsequent implementation into the BERT reliability simulator more than 20 years ago. A brief description of the advancement in the technology since then is given, and some industrial perspectives are summarized concerning how such a tool can be used to effectively optimize product design while ensuring reliability, as well as clarifying issues which still remain in the industrial design environment.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6531941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6531941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

本文介绍了20多年前在加州大学伯克利分校首次发展电路级可靠性仿真的紧凑建模,以及随后在BERT可靠性模拟器中实现的历史背景。简要描述了自那时以来技术的进步,并总结了一些工业观点,即如何使用这样的工具来有效地优化产品设计,同时确保可靠性,以及澄清仍然存在于工业设计环境中的问题。
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Compact modeling for simulation of circuit reliability: Historical and industrial perspectives
This paper provides a historical background of the first developments of compact modeling for circuit-level reliability simulation at UC Berkeley, and the subsequent implementation into the BERT reliability simulator more than 20 years ago. A brief description of the advancement in the technology since then is given, and some industrial perspectives are summarized concerning how such a tool can be used to effectively optimize product design while ensuring reliability, as well as clarifying issues which still remain in the industrial design environment.
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