通过改变OFET的几何形状来改善器件性能

S. Bathla, N. Gaur
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引用次数: 0

摘要

有机半导体由于其应用灵活、制造成本低、占地面积大以及相对于现有无机半导体的深刻优势,近年来引起了人们极大的研究兴趣。其中,增加了研究意义的参数是流动性。有机半导体的迁移率不如无机半导体。与无机半导体相比,有机半导体在提高其迁移率方面取得了很大进展。提高机动性的一种方法是使用多栅极而不是单栅极。所提出的研究工作的结果清楚地展示了SG-OFET和DG-OFET特性的比较及其对迁移率的影响。结果还表明,在无机半导体中也可以观察到相同的效果。利用SILVACO工具对OFET结构进行了设计和特性分析。
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Improving Device Performance of OFET by Changing its Geometry
Organic semiconductors have recently gained significant research interest due to its flexible applications, low fabrication cost, large area and the profound advantages over the existing inorganic semiconductors. Out of this, the parameter that has gained increased research significance is Mobility. Mobility of organic semiconductors are not as good as its inorganic counterparts. Now-a-days organic semiconductors have gained much progress to improve its mobility when compared to inorganic semiconductors. One way to improve mobility is to use multiple gates as comparison to single gate. The results of the proposed research work has clearly demonstrates the comparison between SG-OFET and DG-OFET characteristics and its effects on mobility. Results are also shown that the same effect can be observed in case of inorganic semiconductors. OFET structures are designed and the characteristics are obtained by using SILVACO tool.
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