无栅格遮阳的薄基晶体硅太阳能电池

D. Aiken, A. Barnett
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引用次数: 1

摘要

目前提高硅太阳能电池性能的两个主要机会包括减少厚度和网格遮挡。理想的硅光伏器件厚度为20-100 /spl mu/m,将包含光捕获,并且不会被接触金属化遮蔽。实用性还要求这些器件由低成本基板支撑。有史以来第一次,一种薄的、基于衬底的晶体硅太阳能电池已经被设计和制造,没有网格阴影。触点夹在支撑硅衬底和40 /spl mu/m厚的有源硅器件层之间。器件结果包括535 mV V/sub oc/,可忽略的分流电导和串联电阻。
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Thin, substrate-based crystalline silicon solar cells with no grid shading
Two major opportunities for increasing the performance of present day silicon solar cells involve reducing both the thickness and the grid shading. The ideal silicon photovoltaic device will be 20-100 /spl mu/m thick, will incorporate light trapping, and will not be shaded by contact metallization. Practicality also requires that these devices be supported by a low cost substrate. For the first time, a thin, substrate-based crystalline silicon solar cell has been designed and fabricated with no grid shading. Contacts are sandwiched between a supportive silicon substrate and a 40 /spl mu/m thick active silicon device layer. Device results include a 535 mV V/sub oc/, and negligible shunt conductance and series resistance.
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