H. Baratte, D. La Tulipe, D. Frank, P. Solomon, T. Jackson, S. Wright
{"title":"增强/耗尽GaAs sisfet","authors":"H. Baratte, D. La Tulipe, D. Frank, P. Solomon, T. Jackson, S. Wright","doi":"10.1109/CORNEL.1987.721221","DOIUrl":null,"url":null,"abstract":"As-grown (enhancement-mode) and implanted (depletion-mode) GaAs SISFETs are fabricated in selective areas of the same chip with a self-aligned refractory gate process. Both types of devices have comparable characteristics (transconductances of 350mS/mm at 300K and 380mS/mm at 77K, maximum drain current of 350mA/mm at 300K and 400mA/mm at 77K for 0.8/spl mu/m gate lengths) and low gate leakage. A drift mobility of 20,000 cm/sup 2/V/sup -1s-1/ is measured at 77K for the implanted GaAs SISFETs while 150,000 cm/sup 2/V/sup -1s-1/ is measured for the as-grown heterostructures. Small circuits, fabricated with these enhance-deplete GaAs SISFETs, are de- scribed.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Enhance / Deplete GaAs SISFETs\",\"authors\":\"H. Baratte, D. La Tulipe, D. Frank, P. Solomon, T. Jackson, S. Wright\",\"doi\":\"10.1109/CORNEL.1987.721221\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As-grown (enhancement-mode) and implanted (depletion-mode) GaAs SISFETs are fabricated in selective areas of the same chip with a self-aligned refractory gate process. Both types of devices have comparable characteristics (transconductances of 350mS/mm at 300K and 380mS/mm at 77K, maximum drain current of 350mA/mm at 300K and 400mA/mm at 77K for 0.8/spl mu/m gate lengths) and low gate leakage. A drift mobility of 20,000 cm/sup 2/V/sup -1s-1/ is measured at 77K for the implanted GaAs SISFETs while 150,000 cm/sup 2/V/sup -1s-1/ is measured for the as-grown heterostructures. Small circuits, fabricated with these enhance-deplete GaAs SISFETs, are de- scribed.\",\"PeriodicalId\":247498,\"journal\":{\"name\":\"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-08-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1987.721221\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1987.721221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
As-grown (enhancement-mode) and implanted (depletion-mode) GaAs SISFETs are fabricated in selective areas of the same chip with a self-aligned refractory gate process. Both types of devices have comparable characteristics (transconductances of 350mS/mm at 300K and 380mS/mm at 77K, maximum drain current of 350mA/mm at 300K and 400mA/mm at 77K for 0.8/spl mu/m gate lengths) and low gate leakage. A drift mobility of 20,000 cm/sup 2/V/sup -1s-1/ is measured at 77K for the implanted GaAs SISFETs while 150,000 cm/sup 2/V/sup -1s-1/ is measured for the as-grown heterostructures. Small circuits, fabricated with these enhance-deplete GaAs SISFETs, are de- scribed.
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