直流应力下多晶硅tft的降解机理

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307451

N. Kato, T. Yamada, S. Yamada, T. Nakamura, T. Hamano

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引用次数: 17

摘要

研究了多晶硅薄膜晶体管在直流应力作用下的劣化。在应力作用下，阈值电压的升高与电耗有密切的关系。由于石英衬底导热性差，该通道通过焦耳热达到高温。结果表明，温度升高加速了由栅应力引起的降解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Degradation mechanism of polysilicon TFTs under DC stress

The degradation of polysilicon thin film transistors was investigated under DC stress. There was a strong relationship between increase of threshold voltage and power consumption under stressing. The channel was found to reach high temperature by Joule heat because of poor thermal conductivity of the quartz substrate. It is shown that this temperature rise accelerates the degradation caused by gate stress.<>

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1992 International Technical Digest on Electron Devices Meeting

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