N.V. Vostokov, V.F. Dryakhlushin, A. Klimov, A. Novikov, O. Khrykin, V. Shashkin
{"title":"半导体岛的纳米接触电子性质研究","authors":"N.V. Vostokov, V.F. Dryakhlushin, A. Klimov, A. Novikov, O. Khrykin, V. Shashkin","doi":"10.1109/CRMICO.2001.961611","DOIUrl":null,"url":null,"abstract":"Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this regions. Reason of this effect are indicated. Nanodimensional contact with /spl sim/10/sup -2/ mkm/sup 2/ area to single islands are fabricated, its current-voltage characteristics are investigated.","PeriodicalId":197471,"journal":{"name":"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of nanocontact electron properties to the semiconductor islands\",\"authors\":\"N.V. Vostokov, V.F. Dryakhlushin, A. Klimov, A. Novikov, O. Khrykin, V. Shashkin\",\"doi\":\"10.1109/CRMICO.2001.961611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this regions. Reason of this effect are indicated. Nanodimensional contact with /spl sim/10/sup -2/ mkm/sup 2/ area to single islands are fabricated, its current-voltage characteristics are investigated.\",\"PeriodicalId\":197471,\"journal\":{\"name\":\"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2001.961611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2001.961611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of nanocontact electron properties to the semiconductor islands
Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this regions. Reason of this effect are indicated. Nanodimensional contact with /spl sim/10/sup -2/ mkm/sup 2/ area to single islands are fabricated, its current-voltage characteristics are investigated.
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