{"title":"烧结与滑动键合在高温GaN芯片组装中的应用","authors":"M. Myśliwiec, R. Kisiel","doi":"10.1109/ESTC.2018.8546475","DOIUrl":null,"url":null,"abstract":"In this paper assembly techniques of monocrystalline GaN structures to DBC: sintering and hybrid: sintering + SLID are compared. As an comparison technique shear strength measurements was applied. Study was made on as-received samples, as well as structures aged in temperature above 300 °C for 500 h. Additionally metallographic cross-section of the joints were made and inspected by means of SEM and energy dispersive x-ray spectroscopy. Sintered joints are very porous and does not meet demands for assembly after long term ageing. Hybrid: sintering + SLID joints manufactured at 280 °C are far less porous and fulfil adhesion joint requirements for monocrystalline GaN assembly with excess.","PeriodicalId":198238,"journal":{"name":"2018 7th Electronic System-Integration Technology Conference (ESTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Applying Sintering and SLID Bonding for Assembly of GaN Chips Working at High Temperatures\",\"authors\":\"M. Myśliwiec, R. Kisiel\",\"doi\":\"10.1109/ESTC.2018.8546475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper assembly techniques of monocrystalline GaN structures to DBC: sintering and hybrid: sintering + SLID are compared. As an comparison technique shear strength measurements was applied. Study was made on as-received samples, as well as structures aged in temperature above 300 °C for 500 h. Additionally metallographic cross-section of the joints were made and inspected by means of SEM and energy dispersive x-ray spectroscopy. Sintered joints are very porous and does not meet demands for assembly after long term ageing. Hybrid: sintering + SLID joints manufactured at 280 °C are far less porous and fulfil adhesion joint requirements for monocrystalline GaN assembly with excess.\",\"PeriodicalId\":198238,\"journal\":{\"name\":\"2018 7th Electronic System-Integration Technology Conference (ESTC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 7th Electronic System-Integration Technology Conference (ESTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESTC.2018.8546475\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 7th Electronic System-Integration Technology Conference (ESTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESTC.2018.8546475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Applying Sintering and SLID Bonding for Assembly of GaN Chips Working at High Temperatures
In this paper assembly techniques of monocrystalline GaN structures to DBC: sintering and hybrid: sintering + SLID are compared. As an comparison technique shear strength measurements was applied. Study was made on as-received samples, as well as structures aged in temperature above 300 °C for 500 h. Additionally metallographic cross-section of the joints were made and inspected by means of SEM and energy dispersive x-ray spectroscopy. Sintered joints are very porous and does not meet demands for assembly after long term ageing. Hybrid: sintering + SLID joints manufactured at 280 °C are far less porous and fulfil adhesion joint requirements for monocrystalline GaN assembly with excess.
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